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    The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

  • Specialized Preparation Techniques for Silicon Carbide Ceramics

    Silicon carbide (SiC) ceramic materials possess a range of excellent properties, including high-temperature strength, strong oxidation resistance, superior wear resistance, thermal stability, low thermal expansion coefficient, high thermal conductivity, high hardness, thermal shock resistance, and chemical corrosion resistance. These characteristics make SiC ceramics increasingly applicable in various fields such as automotive, mechanical and chemical industries, environmental protection, space technology, information electronics, and energy. SiC ceramics have become an irreplaceable structural ceramic material in many industrial sectors due to their outstanding performance.

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    A Dummy Wafer is a specialized wafer utilized primarily to fill machine equipment during the wafer manufacturing process.

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    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

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  • Applications of PBN Material

    PBN, or pyrolytic boron nitride, belongs to the hexagonal system and is an advanced inorganic non-metallic material with a purity of up to 99.999%.

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