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  • Monocrystalline Silicon Epitaxial Susceptor

    Monocrystalline Silicon Epitaxial Susceptor

    Perfect for graphite epitaxy and wafer handling process, Semicorex ultra-pure Monocrystalline Silicon Epitaxial Susceptor ensure minimal contamination and provide exceptionally long life performance. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Alumina Mounting Base Plates

    Alumina Mounting Base Plates

    Semicorex Alumina Mounting Base Plates are high-performance ceramic component designed for precise wafer handling in semiconductor manufacturing. Its superior strength, insulation, and thermal stability make it ideal for demanding cleanroom automation environments.*
  • Alumina Ceramic Robotic Arm

    Alumina Ceramic Robotic Arm

    Semicorex Alumina Ceramic Robotic Arm, also known as wafer handling ceramic robotic arm or ceramic silicon wafer handling fork, is a high-performance semiconductor equipment component. Its design takes into account the stringent requirements of semiconductor manufacturing. With its high temperature resistance, wear resistance, chemical stability, and excellent electrical insulation properties, the alumina ceramic arm plays an irreplaceable role in the global semiconductor manufacturing industry. We at Semicorex are dedicated to manufacturing and supplying high-performance Alumina Ceramic Robotic Arm that fuse quality with cost-efficiency.**
  • Epitaxial Single-crystal Si Plate

    Epitaxial Single-crystal Si Plate

    the Epitaxial Single-crystal Si Plate encapsulates the zenith of refinement, durability, and dependability for applications pertaining to graphite epitaxy and wafer manipulation. It is distinguished by its density, planarity, and thermal management capabilities, positioning it as the optimal selection for rigorous operational conditions. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • MOCVD Epitaxy Susceptor

    MOCVD Epitaxy Susceptor

    Semicorex MOCVD Epitaxy Susceptor has emerged as a critical component in Metal-Organic Chemical Vapor Deposition (MOCVD) epitaxy, enabling the fabrication of high-performance semiconductor devices with exceptional efficiency and precision. Its unique combination of material properties makes it perfectly suited for the demanding thermal and chemical environments encountered during epitaxial growth of compound semiconductors.**
  • MOCVD Waferholder

    MOCVD Waferholder

    Semicorex MOCVD Waferholder is an indispensable component for SiC epitaxy growth, offering superior thermal management, chemical resistance, and dimensional stability. By choosing Semicorex's waferholder, you enhance the performance of your MOCVD processes, leading to higher quality products and greater efficiency in your semiconductor manufacturing operations. *
  • Related Blog
  • Reviews

  • Homoepitaxy and Heteroepitaxy Explained Simply

    Homoepitaxy and heteroepitaxy play pivotal roles in material science. Homoepitaxy involves the growth of a crystalline layer on a substrate of the same material, ensuring minimal defects due to perfect lattice matching. In contrast, heteroepitaxy grows a crystalline layer on a different material substrate, which can lead to challenges like lattice mismatch. These processes are crucial in advancing semiconductor devices and thin films. For instance, heteroepitaxy significantly impacts microelectronics and quantum optics, contributing to innovations like Light Emitting Diodes.

  • What are the Pros and Cons of Dry Etching and Wet Etching?

    Etching is an essential process in semiconductor manufacturing. This process can be categorized into two types: dry etching and wet etching. Each technique has its own advantages and limitations, making it crucial to understand the differences between them. So, how do you choose the best etching method? What are the pros and cons of dry etching and wet etching?

  • 3 methods of graphite molding

    The four main molding methods for graphite molding are: extrusion molding, molding, vibratory molding and isostatic molding. Most of the common carbon/graphite materials on the market are molded by hot extrusion and molding (cold or hot), and isostatic molding is a method with leading molding performance. Vibration molding is generally used to manufacture medium and coarse structural graphite, particle size between 0.5-2mm particle size, generally dominated by di-roasted graphitized products, density between 1.55-1.75kg/m³, coarser particles, rougher surface, can not be used for precision machining. It is mainly used in chemical industry and metal smelting.

  • 4th Generation Semiconductors Gallium Oxide/β-Ga2O3

    The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

  • A Review of 9 Sintering Techniques for Silicon Carbide Ceramics

    Silicon carbide (SiC), a prominent structural ceramic, is renowned for its exceptional properties, including high-temperature strength, hardness, elastic modulus, wear resistance, thermal conductivity, and corrosion resistance. These attributes make it suitable for a wide range of applications, from traditional industrial uses in high-temperature kiln furniture, burner nozzles, heat exchangers, sealing rings, and sliding bearings, to advanced applications like ballistic armor, space mirrors, semiconductor wafer chucks, and nuclear fuel cladding.

  • Dislocation in SiC crystals

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

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