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As for aggressive selling prices, we believe that you will be searching far and wide for anything that can beat us. We are able to state with absolute certainty that for such good quality at such costs we've been the lowest around for SiC Etch Carrier Plate,Etch Carrier(ICP/PSS),Plasma Etching Disc,Etch Carrier Holder,SiC Coated Etching Fixtures, You would not have any communication problem with us. We sincerely welcome prospects all around the globe to call us for business enterprise cooperation.
SiC Etch Carrier Plate, With the growing of the company, now our items sold and served at more than 15 countries around the world,such as Europe,North America,Middle-east,South America,Southern Asia and so on. As we bear in our mind that innovation is essential to our growth, new product development is constantly.Besides, Our flexible and efficient operation strategies,High quality products and solutions and competitive prices are exactly what our customers are looking for. Also a considerable service brings us good credit reputation.

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    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • What is C/C composite?

    C/C composite is a carbon-carbon composite material made of carbon fibers as reinforcement and carbon as matrix through processing and carbonization, with excellent mechanical and high-temperature resistance properties. The material was initially used in aerospace and special fields, and with the maturity of the technology, it has been gradually used in photovoltaic, automotive, lithium battery, medical devices and other fields.

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  • The Crucial Role of Epitaxial Layers in Semiconductor Devices

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  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

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    4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

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