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China SiC Coated Graphite Substrate Manufacturers, Suppliers, Factory

We normally believe that one's character decides products' quality, the details decides products' high-quality ,while using the REALISTIC,EFFICIENT AND INNOVATIVE staff spirit for SiC Coated Graphite Substrate,LPE Epi Reactor Barrel,Barrel Reactor Susceptor,Carbide-Coated Susceptor Cylinder,SiC-Coated Susceptor Drum, We have now confident that we can easily offer the premium quality products and solutions at resonable price, good after-sales services into the buyers. And we're going to produce a dazzling future.
SiC Coated Graphite Substrate, We always stick to the tenet of "sincerity, high quality, high efficiency, innovation". With years of efforts, we've got established friendly and stable business relationships with worldwide customers. We welcome any of your inquiries and concerns for our solutions, and we're sure that we are going to offer just what you want, as we always believe that your satisfaction is our success.

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  • Epi-SiC Susceptor

    Epi-SiC Susceptor

    Semicorex Epi-SiC Susceptor, a component engineered with meticulous attention to detail, is indispensable for cutting-edge semiconductor fabrication, especially in epitaxial applications. The Epi-SiC Susceptor’s design, which embodies precision and innovation, supports the epitaxial deposition of semiconductor materials on wafers, ensuring exceptional efficiency and dependability in performance. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • TaC Coating Half-moon

    TaC Coating Half-moon

    Semicorex TaC Coating Half-moon is a specialized component crafted from tantalum carbide (TaC) coated graphite, designed for use in epitaxial processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Wafer Tray

    SiC Wafer Tray

    The Semicorex SiC Wafer Tray is a vital asset in the Metal-Organic Chemical Vapor Deposition (MOCVD) process, meticulously designed to support and heat semiconductor wafers during the essential step of epitaxial layer deposition. This tray is integral to semiconductor device manufacturing, where the precision of layer growth is of utmost importance. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Wafer Tray that fuse quality with cost-efficiency.
  • Porous Graphite with TaC Coating

    Porous Graphite with TaC Coating

    Semicorex Porous Graphite with TaC Coating is a specialized material designed to address critical challenges in the growth of Silicon Carbide (SiC) crystals. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC Coating Component

    SiC Coating Component

    Semicorex SiC Coating Component is an essential material designed to meet the demanding requirements of the SiC epitaxy process, a pivotal stage in semiconductor manufacturing. It plays a critical role in optimizing the growth environment for silicon carbide (SiC) crystals, contributing significantly to the quality and performance of the final product.*
  • SiC Coated Graphite Trays

    SiC Coated Graphite Trays

    Semicorex SiC Coated Graphite Trays are high-performance carrier solutions specifically designed for AlGaN epitaxial growth in the UV LED industry. Choose Semicorex for industry-leading material purity, precision engineering, and unmatched reliability in demanding MOCVD environments.*
  • Related Blog
  • Reviews

  • What is quartz?

    Quartz (SiO₂) material is very similar to glass at first glance, but the special thing is that the general glass is made up of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while the quartz contains only SiO₂ components, and the microstructure of its silicon dioxide tetrahedral structural units composed of a simple network.

  • Method of GaN Crystal Growth

    When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

  • Purification Technology of Graphite in SiC semiconductor

    Graphite is vital in producing Silicon Carbide (SiC) semiconductors, known for their exceptional thermal and electrical properties. This makes SiC ideal for high-power, high-temperature, and high-frequency applications. In SiC semiconductor manufacturing, graphite is commonly used for crucibles, heaters, and other high-temperature processing components due to its excellent thermal conductivity, chemical stability, and resistance to thermal shock.

  • The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

    4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

  • The Fatal Flaw of GaN

    ​As the world searches for new opportunities in the semiconductor field, Gallium Nitride (GaN) continues to stand out as a potential candidate for future power and RF applications. However, despite its numerous benefits, GaN faces a significant challenge: the absence of P-type products. Why is GaN hailed as the next major semiconductor material, why is the lack of P-type GaN devices a critical drawback, and what does this mean for future designs?

  • What are First-generation, Second-generation, Third-generation, and Fourth-generation semiconductor materials?

    Semiconductor materials are the materials with electrical conductivity between conductors and insulators at room temperature, which are widely used in fields like integrated circuits, communications, energy and optoelectronics. With development of technology, semiconductor materials have evolved from the first generation to the fourth generation.

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