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We also supply merchandise sourcing and flight consolidation companies. We now have our very own manufacturing facility and sourcing business. We could present you with almost every kind of product relevant to our solution array for SiC Coated Graphite Carriers,Etch Carrier(ICP/PSS),SiC Wafer Holder,Silicon Carbide-Coated Wafer Holder,MOCVD Wafer Carrier, Only for accomplish the good-quality product to meet customer's demand, all of our products have been strictly inspected before shipment.
SiC Coated Graphite Carriers, Our business activities and processes are engineered to make sure our customers have access to widest range of products with the shortest supply time lines. This achievement is made possible by our highly skilled and experienced team. We look for people who want to grow with us around the globe and stand out from the crowd. We now have people who embrace tomorrow, have vision, love stretching their minds and going far beyond what they thought was achievable.

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  • SiC Coated Barrel Susceptor

    SiC Coated Barrel Susceptor

    Semicorex is a large-scale manufacturer and supplier of SiC Coated Barrel Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Silicon Carbide ICP Etching Carrier

    Silicon Carbide ICP Etching Carrier

    Looking for a reliable wafer carrier for etching processes? Look no further than Semicorex's Silicon Carbide ICP Etching Carrier. Our product is engineered to withstand high temperatures and harsh chemical cleaning, ensuring durability and longevity. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • P-type SiC Substrate Wafer

    P-type SiC Substrate Wafer

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafers for many years. Our P-type SiC Substrate Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Quartz Bell Jar

    Quartz Bell Jar

    Semicorex Quartz Bell Jar stands as a crucial component within the semiconductor industry, embodying both functionality and precision. Crafted from high-purity quartz, this bell-shaped enclosure serves as a vessel for various processes critical to semiconductor manufacturing, notably epitaxial growth and chemical vapor deposition (CVD). Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Al2O3 Vacuum Chucks

    Al2O3 Vacuum Chucks

    Semicorex Al2O3 Vacuum Chucks are microporous ceramic adsorption fixture made from black alumina with a porosity of 35–40%, specifically designed for wafer handling in semiconductor applications. Choosing Semicorex means benefiting from advanced ceramic technology, precision engineering, and reliable product quality that ensure stable performance in demanding cleanroom environments.*
  • Silicon Pedestal Boat

    Silicon Pedestal Boat

    Semicorex Silicon Pedestal Boat is a 9N ultra-high purity wafer carrier engineered for precise and stable wafer support in high-temperature oxidation, diffusion, and LPCVD processes. Choose Semicorex for unmatched material purity, precision machining, and proven reliability*
  • Related Blog
  • Reviews

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • What is a SiC Boat, and What are its Various Manufacturing Processes?

    A SiC boat, short for silicon carbide boat, is a high-temperature-resistant accessory used in furnace tubes to carry wafers during high-temperature processing. Due to the outstanding properties of silicon carbide such as resistance to high temperatures, chemical corrosion, and excellent thermal stability, SiC boats are extensively utilized in various thermal treatment processes including diffusion, oxidation, Chemical Vapor Deposition (CVD), and annealing.

  • Key Parameters of Silicon Carbide (SiC) Substrates

    The Silicon Carbide (SiC) production process encompasses the preparation of substrate and epitaxy from the materials side, followed by chip design and manufacturing, device packaging, and finally, distribution to downstream application markets. Among these stages, substrate material processing is the most challenging aspect of the SiC industry. SiC substrates are both hard and brittle, making cutting, grinding, and polishing extremely difficult. This increases the likelihood of defects during processing and reduces the yield rate. Currently, major international SiC manufacturers are planning to transition from 6-inch to 8-inch SiC wafers. Overcoming the challenges associated with 8-inch substrates has become a critical benchmark for the SiC industry. This article will introduce the key parameters of SiC substrates.

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • Exploring the Future Prospects of Silicon Semiconductor Chips

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