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  • Silicon Etch Plate for PSS Etching Applications

    Silicon Etch Plate for PSS Etching Applications

    Semicorex's Silicon Etch Plate for PSS Etching Applications is a high-quality, ultra-pure graphite carrier that is specifically designed for epitaxial growth and wafer handling processes. Our carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The silicon etch plate for PSS etching applications has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • RTP RTA SiC Coated Carrier

    RTP RTA SiC Coated Carrier

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our RTP RTA SiC Coated Carrier has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • MOCVD Cover Star Disc Plate for Wafer Epitaxy

    MOCVD Cover Star Disc Plate for Wafer Epitaxy

    Semicorex is a renowned manufacturer and supplier of high-quality MOCVD Cover Star Disc Plate for Wafer Epitaxy. Our product is specially designed to cater to the needs of the semiconductor industry, particularly in growing the epitaxial layer on the wafer chip. Our susceptor is used as the center plate in MOCVD, with a gear or ring-shaped design. The product is highly resistant to high heat and corrosion, making it ideal for use in extreme environments.
  • CVD SiC Coated Barrel Susceptor

    CVD SiC Coated Barrel Susceptor

    Semicorex CVD SiC Coated Barrel Susceptor is a meticulously engineered component tailored for advanced semiconductor manufacturing processes, particularly epitaxy. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • TaC Coating Planetary Plate

    TaC Coating Planetary Plate

    Semicorex TaC Coating Planetary Plate is a high-performance component designed specifically for MOCVD systems. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Upper Half Moon

    Upper Half Moon

    Semicorex Upper Half Moon is a semi-circular SiC coated graphite wafer susceptor designed for use in epitaxial reactors. Choose Semicorex for industry-leading material purity, precision machining, and uniform SiC coating that ensures long-lasting performance and superior wafer quality.*
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  • LPE Apparatus

    In the realm of semiconductor device fabrication, the precise control of crystal growth is paramount for achieving high-quality and reliable devices. One technique that has played a pivotal role in this domain is Liquid-Phase Epitaxy (LPE).

  • TaC coating with CVD method

    Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.

  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • Doping Control in Sublimation SiC Growth

    Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

  • Silicon Carbide Substrate

    The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

  • The structure of Electrostatic Chuck(ESC)

    An Electrostatic Chuck (ESC) is a device used to hold semiconductor wafers in place during processes such as etching, deposition, or polishing.

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