English
Home > Products > led substrate

China led substrate Manufacturers, Suppliers, Factory

Our goal will be to offer premium quality items at competitive price ranges, and top-notch support to consumers around the planet. We are ISO9001, CE, and GS certified and strictly adhere to their high quality specifications for led substrate,Ceramic Insulating Heat Dissipation Substrates,silicon nitride substrate,silicon nitride ceramic substrate,sin substrate, Only for accomplish the good-quality product to meet customer's demand, all of our products have been strictly inspected before shipment.
led substrate, We always stick to the tenet of "sincerity, high quality, high efficiency, innovation". With years of efforts, we have established friendly and stable business relationships with worldwide customers. We welcome any of your inquiries and concerns for our merchandise, and we have been sure that we'll supply just what you want, as we always believe that your satisfaction is our success.

Related Products

Hot Products

  • Silicon Carbide Graphite Substrate MOCVD Susceptor

    Silicon Carbide Graphite Substrate MOCVD Susceptor

    Semicorex Silicon Carbide Graphite Substrate MOCVD Susceptor is the ultimate choice for semiconductor manufacturers looking for a high-quality carrier that can deliver superior performance and durability. Its advanced material ensures even thermal profile and laminar gas flow pattern, delivering high-quality wafers.
  • SiC Wafer Carrier in Semiconductor

    SiC Wafer Carrier in Semiconductor

    Semicorex SiC Wafer Carrier in Semiconductor, is a specialized tool used in the handling and processing of semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Cantilever Paddle

    SiC Cantilever Paddle

    Semicorex SiC (Silicon Carbide) Cantilever Paddle is a crucial component used in semiconductor manufacturing processes, particularly in diffusion or LPCVD (Low-Pressure Chemical Vapor Deposition) furnaces during processes like diffusion and RTP (Rapid Thermal Processing). The SiC Cantilever Paddle is to carry semiconductor wafers securely within the process tube during various high-temperature processes such as diffusion and RTP. It serves the purpose of supporting and transporting wafers within the process tube of these furnaces. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coating Planetary Plate

    TaC Coating Planetary Plate

    Semicorex TaC Coating Planetary Plate is a high-performance component designed specifically for MOCVD systems. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC O Ring

    SiC O Ring

    Semicorex SiC O Ring is highly valued in a range of industries for their exceptional sealing capabilities and material properties. Its use spans applications where extreme conditions such as high temperatures, aggressive chemicals, mechanical stress, and stringent cleanliness are routine.**
  • Quartz Crucibles

    Quartz Crucibles

    Semicorex Quartz crucibles are indispensable tools in the photovoltaic industry, ensuring the successful growth of high-quality silicon crystals under extreme conditions. Semicorex quartz crucibles offer unparalleled performance, reliability, and adaptability, making them the ideal choice for manufacturers striving for excellence in solar energy production.*
  • Related Blog
  • Reviews

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • What is a SiC Boat, and What are its Various Manufacturing Processes?

    A SiC boat, short for silicon carbide boat, is a high-temperature-resistant accessory used in furnace tubes to carry wafers during high-temperature processing. Due to the outstanding properties of silicon carbide such as resistance to high temperatures, chemical corrosion, and excellent thermal stability, SiC boats are extensively utilized in various thermal treatment processes including diffusion, oxidation, Chemical Vapor Deposition (CVD), and annealing.

  • Substrate vs. Epitaxy: Key Roles in Semiconductor Manufacturing

    ​In the realms of semiconductor technology and microelectronics, the concepts of substrates and epitaxy hold significant importance. They play critical roles in the manufacturing process of semiconductor devices. This article will delve into the differences between semiconductor substrates and epitaxy, covering their definitions, functions, material structures, and application areas.

  • The Fatal Flaw of GaN

    ​As the world searches for new opportunities in the semiconductor field, Gallium Nitride (GaN) continues to stand out as a potential candidate for future power and RF applications. However, despite its numerous benefits, GaN faces a significant challenge: the absence of P-type products. Why is GaN hailed as the next major semiconductor material, why is the lack of P-type GaN devices a critical drawback, and what does this mean for future designs?

  • The structure of Electrostatic Chuck(ESC)

    An Electrostatic Chuck (ESC) is a device used to hold semiconductor wafers in place during processes such as etching, deposition, or polishing.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept