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    Semicorex PSS Etching Carrier Plate for Semiconductor is specially engineered for high-temperature and harsh chemical cleaning environments required for epitaxial growth and wafer handling processes. Our ultra-pure PSS Etching Carrier Plate for Semiconductor is designed to support wafers during thin-film deposition phases like MOCVD and epitaxy susceptors, pancake or satellite platforms. Our SiC coated carrier has high heat and corrosion resistance, excellent heat distribution properties, and a high thermal conductivity. We provide cost-effective solutions to our customers, and our products cover many European and American markets. Semicorex looks forward to being your long-term partner in China.
  • High-Purity SiC Boat

    High-Purity SiC Boat

    Constructed from silicon carbide of exceptional purity, The Semicorex High-Purity SiC Boat demonstrates superior thermal stability, mechanical robustness, and resistance to chemicals. This material selection is critical to diminish potential contamination, safeguard the wafers from harm, and endure the rigorous conditions encountered in semiconductor fabrication. Semicorex’s commitment to manufacturing and supplying market-leading quality products, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • Cassette Handles

    Cassette Handles

    Semicorex Cassette handles made of PFA and PTFE ensure the safe and efficient movement of wafer cassettes in semiconductor processing. Choose Semicorex for high-performance, durable handles that offer superior chemical resistance and thermal stability, ensuring optimal wafer protection and manufacturing efficiency.*
  • Soft Graphite Felt

    Soft Graphite Felt

    Semicorex Soft Graphite Felt is a high-performance thermal insulation material designed for extreme temperature applications, offering exceptional stability and reliability. Choosing Semicorex means opting for superior quality and innovation, backed by our commitment to delivering top-tier semiconductor components that meet the highest industry standards.*
  • PBN Ceramic Disc

    PBN Ceramic Disc

    PBN Ceramic Disc by Semicorex is synthesized through an intricate chemical vapor deposition (CVD) process, utilizing boron trichloride (BCl3) and ammonia (NH3) at elevated temperatures and low pressures. This method of synthesis results in a material of exceptional purity and structural integrity, making it indispensable for a variety of applications within the semiconductor industry.**
  • MOCVD Waferholder

    MOCVD Waferholder

    Semicorex MOCVD Waferholder is an indispensable component for SiC epitaxy growth, offering superior thermal management, chemical resistance, and dimensional stability. By choosing Semicorex's waferholder, you enhance the performance of your MOCVD processes, leading to higher quality products and greater efficiency in your semiconductor manufacturing operations. *
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  • Introducing Gallium Oxide(Ga2O3)

    Gallium oxide (Ga2O3) as an "ultra-wide bandgap semiconductor" material has garnered sustained attention. Ultra-wide bandgap semiconductors fall under the category of "fourth-generation semiconductors," and in comparison to third-generation semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), gallium oxide boasts a bandgap width of 4.9eV, surpassing silicon carbide's 3.2eV and gallium nitride's 3.39eV. A wider bandgap implies that electrons require more energy to transition from the valence band to the conduction band, endowing gallium oxide with characteristics like high voltage resistance, high-temperature tolerance, high power capability, and radiation resistance.

  • Silicon Carbide Applications

    Silicon carbide has a large number of applications in emerging industries and traditional industries. At present, the global semiconductor market has exceeded 100 billion yuan. It is expected that by 2025, the global sales of semiconductor manufacturing materials will reach 39.5 billion US dollars, of which the silicon carbide semiconductor market is expected to reach a market size of 2.5 billion US dollars in 2025. At the same time, silicon carbide is still the material with the best application performance in traditional ceramics, refractory, high temperature, grinding and other fields.

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • Homoepitaxy and Heteroepitaxy Explained Simply

    Homoepitaxy and heteroepitaxy play pivotal roles in material science. Homoepitaxy involves the growth of a crystalline layer on a substrate of the same material, ensuring minimal defects due to perfect lattice matching. In contrast, heteroepitaxy grows a crystalline layer on a different material substrate, which can lead to challenges like lattice mismatch. These processes are crucial in advancing semiconductor devices and thin films. For instance, heteroepitaxy significantly impacts microelectronics and quantum optics, contributing to innovations like Light Emitting Diodes.

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