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  • Barrel Structure for Semiconductor Epitaxial Reactor

    Barrel Structure for Semiconductor Epitaxial Reactor

    With its exceptional thermal conductivity and heat distribution properties, the Semicorex Barrel Structure for Semiconductor Epitaxial Reactor is the perfect choice for use in LPE processes and other semiconductor manufacturing applications. Its high-purity SiC coating provides superior protection in high-temperature and corrosive environments.
  • Monocrystalline Silicon Wafer Susceptor

    Monocrystalline Silicon Wafer Susceptor

    Semicorex Monocrystalline Silicon Wafer Susceptor is the ideal solution for graphite epitaxy and wafer handling processes. Our ultra-pure product ensures minimal contamination and exceptional long-life performance, making it a popular choice in many European and American markets. As a leading provider of semiconductor wafer carriers in China, we look forward to becoming your long-term partner.
  • TaC Coated Guide Ring

    TaC Coated Guide Ring

    Semicorex TaC Coated Guide Ring, a pinnacle of innovation in SiC (Silicon Carbide) single crystal growth furnaces. Meticulously designed to meet the exacting demands of the semiconductor industry, this guide ring promises to redefine your crystal growth processes with unparalleled precision and reliability.
  • SiC Wafer Susceptors for MOCVD

    SiC Wafer Susceptors for MOCVD

    The Semicorex SiC Wafer Susceptors for MOCVD are a paragon of precision and innovation, specifically crafted to facilitate the epitaxial deposition of semiconductor materials onto wafers. The plates’ superior material properties enable them to withstand the stringent conditions of epitaxial growth, including high temperatures and corrosive environments, making them indispensable for high-precision semiconductor manufacturing. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Wafer Susceptors for MOCVD that fuse quality with cost-efficiency.
  • SiC Susceptor for ICP Etch

    SiC Susceptor for ICP Etch

    Semicorex SiC Susceptor for ICP Etch is manufactured with a focus on maintaining high standards of quality and consistency. The robust manufacturing processes used to create these susceptors ensure that each batch meets stringent performance criteria, delivering reliable and consistent results in semiconductor etching. Additionally, Semicorex is equipped to offer fast delivery schedules, which is crucial for keeping pace with the rapid turnaround demands of the semiconductor industry, ensuring that production timelines are met without compromising on quality.We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Susceptor for ICP Etch that fuse quality with cost-efficiency.**
  • SiC Arm

    SiC Arm

    Semicorex SiC Arm is a high-purity silicon carbide component designed for precise wafer handling and positioning in semiconductor manufacturing. Choosing Semicorex ensures unmatched material reliability, chemical resistance, and precision engineering that support the most demanding semiconductor processes.*
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  • Reviews

  • What is epitaxial wafer process?

    Epitaxial wafer process is a critical technique used in semiconductor manufacturing. It involves the growth of a thin layer of crystal material on top of a substrate, which has the same crystal structure and orientation as the substrate. This process creates a high-quality interface between the two materials, allowing for the development of advanced electronic devices.

  • Tantalum carbide coatings in semiconductor industry

    The development of high-powered blue and UV LEDs has enabled the creation of full-color LED TV displays, as well as white LED automotive and domestic lighting. These LEDs are based on Gallium Nitride, which is deposited on substrate wafers supported by CVD SiC-coated graphite susceptor using the MOCVD process.

  • Applications of TaC Coated Graphite Components

    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

  • 4th Generation Semiconductors Gallium Oxide/β-Ga2O3

    The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

  • SiC Ceramics: The Indispensable Material for High-Precision Components in Semiconductor Manufacturing

    Semiconductor manufacturing, the cornerstone of modern technological advancement, is in constant pursuit of smaller, faster, and more efficient integrated circuits. This relentless pursuit drives the need for increasingly precise and sophisticated manufacturing processes, where each step relies heavily on high-performance, high-quality, and high-precision equipment. Silicon carbide (SiC), a high-performance structural ceramic material, plays a crucial role in this demanding environment.

  • SiC Single Crystal Substrate Processing

    Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

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