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Our mission is usually to turn into an innovative provider of high-tech digital and communication devices by providing worth added design and style, world-class producing, and repair capabilities for Foup,Wafer Cassettes,Wafer Cassette Box,PFA cassette,wafer carrier, We welcome new and previous customers from all walks of lifetime to speak to us for future organization relationships and mutual achievement!
Foup, Satisfaction and good credit to every customer is our priority. We focus on every detail of order processing for customers till they have received safe and sound products with good logistics service and economical cost. Depending on this, our products and solutions are sold very well in the countries in Africa, the Mid-East and Southeast Asia.

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    MOCVD Vacuum Chamber Lid used in crystal growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex Silicon Carbide Coated MOCVD Vacuum Chamber Lid engineered specifically stand up to these challenging environments. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Carbon and Graphite Soft Felt

    Carbon and Graphite Soft Felt

    Semicorex Carbon and graphite soft felt is a specialized material that is made from carbon fibers or graphite fibers that are intertwined to form a soft, flexible, and porous structure. It is commonly used in various industrial applications due to its unique properties.
  • CVD SiC Coated Graphite Shower Head

    CVD SiC Coated Graphite Shower Head

    In a plasma apparatus for etching and chemical vapor deposition (CVD) of materials on wafers, process gases are supplied into a process chamber through a CVD SiC coated graphite shower head. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • C/SiC Ceramic Matrix Composites

    C/SiC Ceramic Matrix Composites

    C/SiC Ceramic Matrix Composites is a new type of thermal structure/functional integration material that combines the advantages of metal, ceramic and carbon materials, and has the characteristics of high-temperature resistance, low density, high strength ratio, high specific modulus, oxidation resistance, ablation resistance, insensitivity to cracks, and no catastrophic damage. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Bearing

    SiC Bearing

    Semicorex SiC Bearing with its exceptional hardness, strength, and chemical inertness, has emerged as a cornerstone material for engineering demanding applications across diverse industries. When crafted into bearings, SiC unlocks a new level of performance and reliability, particularly in environments characterized by extreme temperatures, corrosive substances, and stringent purity requirements. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Bearing that fuses quality with cost-efficiency.**
  • Aluminum Nitride Substrates

    Aluminum Nitride Substrates

    Semicorex Aluminum nitride substrates provide an advanced solution for high-performance RF filter applications, offering superior piezoelectric properties, high thermal conductivity, and excellent stability. Choosing Semicorex ensures access to internationally recognized quality, cutting-edge technology, and scalable manufacturing capabilities, making it the ideal partner for 5G and next-generation electronic components.*
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  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • MOCVD is the key equipment

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    The application areas of SiC-based and Si-based GaN are not strictly separated. In GaN-On-SiC devices, the cost of SiC substrate is relatively high, and with the growing maturity of SiC long crystal technology, the cost of the device is expected to fall further, and it is used in power devices in the field of power electronics.

  • What is a TaC coating on graphite?

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  • The Fatal Flaw of GaN

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