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With our excellent management, strong technical capability and strict quality control system, we continue to provide our clients with reliable quality, reasonable prices and excellent services. We aim at becoming one of your most reliable partners and earning your satisfaction for Etched Silicon Wafer Carrier,Etch Carrier(ICP/PSS),Plasma Etching Disc,Etch Carrier Holder,SiC Coated Etching Fixtures, Welcome your browsing and any your inquires,sincerely hope we are able to have chance to cooperate with you and we will build-up extensive effectively company marriage along with you.
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  • SiC Coated MOCVD Graphite Satellite Platform

    SiC Coated MOCVD Graphite Satellite Platform

    Semicorex is a reputable supplier and manufacturer of SiC Coated MOCVD Graphite Satellite Platform. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • CVD SiC Coated Graphite Susceptor

    CVD SiC Coated Graphite Susceptor

    Semicorex CVD SiC Coated Graphite Susceptor, is a specialized tool used in the handling and processing of semiconductor wafers. The susceptor plays a crucial role in facilitating the growth of thin films, epitaxial layers, and other coatings on substrates with precise control over temperature and material properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Tantalum Carbide Coated Graphite Susceptor

    Tantalum Carbide Coated Graphite Susceptor

    Semicorex provides Tantalum Carbide Coated Graphite Susceptor with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC MOCVD Cover Segment

    SiC MOCVD Cover Segment

    Semicorex' s commitment to quality and innovation is evident in the SiC MOCVD Cover Segment. By enabling reliable, efficient, and high-quality SiC epitaxy, it plays a vital role in advancing the capabilities of next-generation semiconductor devices.**
  • Satellite Plate

    Satellite Plate

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  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • Application and Development Challenges of TaC Coated Graphite Components

    The third-generation wide bandgap semiconductor materials, such as Gallium Nitride (GaN) and Silicon Carbide (SiC), are renowned for their exceptional optoelectronic conversion and microwave signal transmission capabilities. These materials meet the demanding requirements of high-frequency, high-temperature, high-power, and radiation-resistant electronic devices. Therefore, they have vast application prospects in new-generation mobile communications, new energy vehicles, smart grids, and LED technologies. The comprehensive development of the third-generation semiconductor industry urgently requires breakthroughs in key core technologies, continual advancement in device design and innovation, and a resolution to import dependencies.

  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

  • What is CMP Process

    In semiconductor manufacturing, atomic-level flatness is usually used to describe the global flatness of the wafer, with the unit of nanometers (nm).

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    In the process of silicon wafer manufacturing, after the crystal rod is cut into silicon wafers, it will need to be polished and cleaned to obtain a single crystal silicon wafer like a mirror.

  • SiC Single Crystal Substrate Processing

    Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

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