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epi layer, We always insist on the management tenet of "Quality is first, Technology is basis, Honesty and Innovation".We've been able to develop new products and solutions continuously to a higher level to satisfy different needs of customers.

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  • RTP Carrier for MOCVD Epitaxial Growth

    RTP Carrier for MOCVD Epitaxial Growth

    Semicorex RTP Carrier for MOCVD Epitaxial Growth is ideal for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Carbon graphite susceptors and quartz crucibles are processed by MOCVD on the surface of graphite, ceramics, etc. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • TaC Coated Plate

    TaC Coated Plate

    Semicorex TaC Coated Plate is a specialized disc designed for use in SiC epitaxial processes, crafted with precision from high-quality graphite material. Its surface is meticulously coated with tantalum carbide (TaC), a compound known for its exceptional purity and strength. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • GaN Epitaxy Carrier

    GaN Epitaxy Carrier

    The Semicorex GaN Epitaxy Carrier is pivotal in semiconductor manufacturing, integrating advanced materials and precision engineering. Distinguished by its CVD SiC coating, this carrier offers exceptional durability, thermal efficiency, and protective capabilities, establishing itself as a standout in the industry. We at Semicorex are dedicated to manufacturing and supplying high-performance GaN Epitaxy Carrier that fuse quality with cost-efficiency.
  • MOCVD 3x2’’ Susceptor

    MOCVD 3x2’’ Susceptor

    Semicorex MOCVD 3x2’’ Susceptor developed by Semicorex represents a pinnacle of innovation and engineering excellence, specifically tailored to meet the intricate demands of contemporary semiconductor manufacturing processes.**
  • SiC Coating Heater

    SiC Coating Heater

    The CVD SiC coating of Semicorex SiC Coating Heater offers superior performance in protecting heating elements from the harsh, corrosive, and reactive environments often encountered in processes such as Metal-Organic Chemical Vapor Deposition (MOCVD) and Epitaxial Growth.**
  • Porous Alumina Chucks

    Porous Alumina Chucks

    Semicorex Porous Alumina Chucks are microporous black alumina vacuum fixture with 35–40% porosity, designed to provide uniform suction and safe wafer handling in semiconductor manufacturing. Choosing Semicorex means reliable ceramic engineering, superior material quality, and consistent performance that safeguard yield and process stability.*
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  • Methods of AlN Crystal Growth

    AlN, as third-generation semiconductor material, is not only an important blue light and ultraviolet light material, but also an important packaging, dielectric isolation and insulation material for electronic devices and integrated circuits, especially suitable for high-temperature and high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

  • What is quartz?

    Quartz (SiO₂) material is very similar to glass at first glance, but the special thing is that the general glass is made up of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while the quartz contains only SiO₂ components, and the microstructure of its silicon dioxide tetrahedral structural units composed of a simple network.

  • Doping Control in Sublimation SiC Growth

    Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

  • Monocrystalline silicon vs. polycrystalline silicon

    Single crystal silicon and polycrystalline silicon each have their own unique advantages and applicable scenarios. Single crystal silicon is suitable for high-performance electronic products and microelectronics due to its excellent electrical and mechanical properties. Polycrystalline silicon, on the other hand, dominates the field of solar cells due to its low cost and good photoelectric conversion efficiency.

  • Annealing Processes in Modern Semiconductor Manufacturing

    As technology nodes continue to shrink, the formation of ultra-shallow junctions presents significant challenges. Thermal annealing processes including Rapid thermal annealing (RTA) and flash lamp annealing (FLA) are vital techniques that maintain high impurity activation rates while minimizing diffusion, ensuring optimal device performance.

  • What is Low Temperature Plasma Etching?

    Plasma is the fourth state of matter, and it plays a crucial role in both industrial applications and natural phenomena.

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