English
Home > Products > Carbide-Coated Graphite Barrel

China Carbide-Coated Graphite Barrel Manufacturers, Suppliers, Factory

We are commitment to offer the competitive price ,outstanding products quality, as well as fast delivery for Carbide-Coated Graphite Barrel,LED Chips,LED Light Emitting Diode,Carrier Wafer,Epi Wafer Process, We have been prepared to offer you the top suggestions on the designs of one's orders in a professional way if you need. During the meantime, we retain on developing new technologies and building new designs so as for making you ahead within the line of this business.
Carbide-Coated Graphite Barrel, Customer's satisfaction is always our quest, creating value for customers is always our duty, a long term mutual-beneficial business relationship is what we've been doing for. We are an absolutely reliable partner for yourself in China. Of course, other services, like consulting, can be offered too.

Related Products

Hot Products

  • SiC Plate for ICP Etching Process

    SiC Plate for ICP Etching Process

    Semicorex's SiC Plate for ICP Etching Process is the perfect solution for high-temperature and harsh chemical processing requirements in thin film deposition and wafer handling. Our product boasts superior heat resistance and even thermal uniformity, ensuring consistent epi layer thickness and resistance. With a clean and smooth surface, our high-purity SiC crystal coating provides optimal handling for pristine wafers.
  • Isostatic Graphite Crucible

    Isostatic Graphite Crucible

    Semicorex Isostatic Graphite Crucible is a specialized vessel used in the thermal processing of semiconductor materials, particularly in the production of monocrystals. It plays a crucial role in the controlled growth of single-crystal structures essential for semiconductor device fabrication. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Dummy Wafer

    SiC Dummy Wafer

    Semicorex SiC Dummy Wafer is a specialized tool in semiconductor manufacturing, designed primarily for experimental and testing purposes.**
  • Graphite Bushing

    Graphite Bushing

    Semicorex Graphite Bushing, with its unique material characteristics and adaptability, plays a critical role in enhancing the performance and longevity of mechanical systems, underscoring its significance in modern engineering and manufacturing processes.
  • RB-SiC Reflecting Mirrors

    RB-SiC Reflecting Mirrors

    Semicorex RB-SiC reflecting mirrors are optical components made of silicon carbide through the reaction-sintering process. They feature superior thermal stability, high specific stiffness, and excellent optical performance.
  • SSIC Sealing Rings

    SSIC Sealing Rings

    With superb hardness, excellent wear resistance, remarkable high-temperature resistance and strong chemical stability, SSIC sealing rings have become an irreplaceable sealing solution in modern machining processes. It can be fully compatible with challenging complex working conditions such as high temperature, high pressure and strong corrosion.
  • Related Blog
  • Reviews

  • Chip shortage continues to be a problem

    While there is currently an oversupply of memory semiconductors due to a sluggish global economy, analog chips for automotive and industrial applications remain in short supply. Lead times for these analog chips can be as long as 40 weeks, compared to around 20 weeks for memory stocks.

  • How to Manufacture Graphite Rods?

    Compression molding, isostatic pressing, and rod extrusion are the three most common methods for producing graphite rods, similar to those used for creating graphite tubes.

  • What is quartz?

    Quartz (SiO₂) material is very similar to glass at first glance, but the special thing is that the general glass is made up of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while the quartz contains only SiO₂ components, and the microstructure of its silicon dioxide tetrahedral structural units composed of a simple network.

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • Difficulties in GaN preparation

    As a third-generation semiconductor material, Gallium Nitride is often compared with Silicon Carbide. Gallium Nitride still demonstrates its superiority with its large bandgap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity and strong radiation resistance. But it is undeniable that, like Silicon Carbide, Gallium Nitride also has various technical difficulties.

  • Difficulty in preparing SiC substrates

    At present, the most important direction trend of substrate development is to expand the diameter. The 6-inch mass production line in the global SiC market is maturing, and leading companies have entered the 8-inch market.

Related Search

Carbide-Coated Graphite Barrel SusceptorLPESilicon Carbide-Coated Graphite Barrel

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept