English
Home > Products > Susceptor Semiconductor

China Susceptor Semiconductor Manufacturers, Suppliers, Factory

Our corporation has been specializing in brand strategy. Customers' gratification is our greatest advertising. We also source OEM company for Susceptor Semiconductor,Graphite Tray,Epitaxial Susceptor,Susceptor MOCVD,Silicon Epitaxy Susceptor, And there are quite a few international friends who came for sight seeing, or entrust us to buy other stuff for them. You might be most welcome to arrive to China, to our city also to our factory!
Susceptor Semiconductor, Our main objectives are to provide our customers worldwide with good quality, competitive price, satisfied delivery and excellent services. Customer satisfaction is our main goal. We welcome you to visit our showroom and office. We're looking forward to establish business relation with you.

Related Products

Hot Products

  • Susceptors for MOCVD Reactors

    Susceptors for MOCVD Reactors

    Semicorex's Susceptors for MOCVD Reactors are high-quality products used in the semiconductor industry for various applications such as silicon carbide layers and epitaxy semiconductor. Our product is available in gear or ring shape and is designed to achieve high-temperature oxidation resistance, making it stable at temperatures up to 1600°C.
  • Ga2O3 Substrate

    Ga2O3 Substrate

    Unlock the potential of cutting-edge semiconductor applications with our Ga2O3 Substrate, a revolutionary material at the forefront of semiconductor innovation. Ga2O3, a fourth-generation wide-bandgap semiconductor, exhibits unparalleled characteristics that redefine power device performance and reliability.
  • Custom SiC Cantilever Paddle

    Custom SiC Cantilever Paddle

    Semicorex Custom SiC Cantilever Paddle has become an indispensable component in the photovoltaic industry, playing a critical role in the efficient and precise handling of silicon wafers during high-temperature diffusion processes. The Custom SiC Cantilever Paddle, meticulously engineered from high-performance silicon carbide (SiC) ceramics, offers a unique blend of properties essential for maintaining wafer integrity, ensuring process uniformity, and maximizing productivity in demanding diffusion furnace environments.**
  • CVD SiC Shower head

    CVD SiC Shower head

    Semicorex CVD SiC Shower Head is a core component used in semiconductor etching equipment, serving as both an electrode and a conduit for etching gases. Choose Semicorex for its superior material control, advanced processing technology, and reliable, long-lasting performance in demanding semiconductor applications.*
  • LNOI Wafer

    LNOI Wafer

    Semicorex LNOI Wafer: High-performance Lithium Niobate on Insulator wafers with customizable substrates for advanced photonics and RF applications. With precision engineering, customizable options, and superior material quality, Semicorex ensures high-performance LNOI wafers tailored to your application needs.*
  • PV-use SiC boats

    PV-use SiC boats

    Semicorex PV-use SiC boats are high temperature resistant containers, specifically used to hold and transport silicon wafers throughout the photovoltaic cell production process. Semicorex, your ideal choice.
  • Related Blog
  • Reviews

  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • GaN Industry Applications

    The application areas of SiC-based and Si-based GaN are not strictly separated. In GaN-On-SiC devices, the cost of SiC substrate is relatively high, and with the growing maturity of SiC long crystal technology, the cost of the device is expected to fall further, and it is used in power devices in the field of power electronics.

  • Introduction to Third-Generation Semiconductors: GaN and Related Epitaxial Technologies

    GaN materials gained prominence following the awarding of the 2014 Nobel Prize in Physics for blue LEDs. Initially entering the public eye through fast-charging applications in consumer electronics, GaN-based power amplifiers and RF devices have also quietly emerged as critical components in 5G base stations. In recent years, GaN-based automotive-grade power devices have shown promise, potentially opening new growth avenues for GaN material applications.

  • Difficulties in GaN preparation

    As a third-generation semiconductor material, Gallium Nitride is often compared with Silicon Carbide. Gallium Nitride still demonstrates its superiority with its large bandgap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity and strong radiation resistance. But it is undeniable that, like Silicon Carbide, Gallium Nitride also has various technical difficulties.

  • What is Crystal Growth Furnace System

    The single crystal growth furnace is composed of six key systems that work in harmony to ensure efficient and high-quality crystal growth.

  • How Are Ceramic Electrostatic Chucks Actually Produced?

    In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process. Any deviation can lead to uneven ion bombardment, causing undesirable angles and variations in etching rates. To address these challenges, engineers have developed Electrostatic Chucks (ESCs), which have significantly improved etching quality and stability. This article delves into the design and functionality of ESCs, focusing on one key aspect: the electrostatic principles behind wafer adhesion.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept