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China Reactive Ion Etching Ring Manufacturers, Suppliers, Factory

"Based on domestic market and expand abroad business" is our enhancement strategy for Reactive Ion Etching Ring,Etch Ring,Silicon Carbide Etching Ring,Plasma Etching Ring,Dry Etching Ring, In our efforts, we already have many shops in China and our products have won praise from customers worldwide. Welcome new and old customers to contact us for the future long term business relationships.
Reactive Ion Etching Ring, With the growing of the company, now our items sold and served at more than 15 countries around the world,such as Europe,North America,Middle-east,South America,Southern Asia and so on. As we bear in our mind that innovation is essential to our growth, new product development is constantly.Besides, Our flexible and efficient operation strategies,High quality products and solutions and competitive prices are exactly what our customers are looking for. Also a considerable service brings us good credit reputation.

Hot Products

Barrel Susceptor with SiC Coating in Semiconductor
If you're looking for a high-quality graphite susceptor coated with high-purity SiC, the Semicorex Barrel Susceptor with SiC Coating in Semiconductor is the perfect choice. Its exceptional thermal conductivity and heat distribution properties make it ideal for use in semiconductor manufacturing applications.
ICP Etching Carrier Plate
Semicorex's ICP Etching Carrier Plate is the perfect solution for demanding wafer handling and thin film deposition processes. Our product provides superior heat and corrosion resistance, even thermal uniformity, and laminar gas flow patterns. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
Inductively-Coupled Plasma (ICP)
Semicorex's silicon carbide coated susceptor for Inductively-Coupled Plasma (ICP) is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
MOCVD Satellite Holder Plate
Semicorex MOCVD Satellite Holder Plate is an outstanding carrier designed for use in the semiconductor industry. Its high purity, excellent corrosion resistance, and even thermal profile make it an excellent choice for those looking for a carrier that can withstand the demands of the semiconductor manufacturing process. We are committed to providing our customers with high-quality products that meet their specific requirements. Contact us today to learn more about our MOCVD Satellite Holder Plate and how we can help you with your semiconductor manufacturing needs.
TaC Tantalum Carbide Coated Plate
Semicorex TaC Tantalum Carbide Coated Plate is a cutting-edge solution designed to meet the stringent demands of semiconductor manufacturing, particularly in the epitaxial (epi) processing stage. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
SiC Coating Flat Part
Semicorex SiC Coating Flat Part is a SiC-coated graphite component essential for uniform airflow conduction in the SiC epitaxy process. Semicorex delivers precision-engineered solutions with unmatched quality, ensuring optimal performance for semiconductor manufacturing.*

Related Blog
Reviews

Difficulty in preparing SiC substrates
At present, the most important direction trend of substrate development is to expand the diameter. The 6-inch mass production line in the global SiC market is maturing, and leading companies have entered the 8-inch market.
Heteroepitaxy of 3C-SiC: An Overview
The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.
Isostatic Graphite Production Technology
Isostatic pressing technology is a critical process in the manufacturing of isostatic graphite, largely determining the performance of the final product. As such, comprehensive research and optimization of isostatic graphite production remain essential focal points in the industry.
Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers
Etching Process: Silicon vs. Silicon Carbide
SiC Single Crystal Substrate Processing
Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.
SK Siltron Expands Its SiC Wafer Production with a $544 Million Loan from the U.S. Department of Energy
The U.S. Department of Energy (DOE) recently confirmed a $544 million loan to SK Siltron, a semiconductor wafer manufacturer under SK Group.

China Reactive Ion Etching Ring Manufacturers, Suppliers, Factory

Related Products

Hot Products

Barrel Susceptor with SiC Coating in Semiconductor

ICP Etching Carrier Plate

Inductively-Coupled Plasma (ICP)

MOCVD Satellite Holder Plate

TaC Tantalum Carbide Coated Plate

SiC Coating Flat Part

Difficulty in preparing SiC substrates

Heteroepitaxy of 3C-SiC: An Overview

Isostatic Graphite Production Technology

Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers

SiC Single Crystal Substrate Processing

SK Siltron Expands Its SiC Wafer Production with a $544 Million Loan from the U.S. Department of Energy

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