English
Home > Products > High-Temperature Seals

China High-Temperature Seals Manufacturers, Suppliers, Factory

Our solutions are greatly recognized and reliable by customers and will fulfill continuously altering financial and social requirements for High-Temperature Seals,Carbide Seal Ring,Bearing Seal,Graphite Bush Rings,Sic Seal Ring, Our enterprise warmly welcome close friends from everywhere in the environment to go to, examine and negotiate organization.
High-Temperature Seals, Excellent quality, competitive price, punctual delivery and dependable service can be guaranteed. For further inquires you should do not hesitate to contact us. Thank you - Your support continuously inspires us.

Related Products

Hot Products

  • MOCVD Susceptor for Epitaxial Growth

    MOCVD Susceptor for Epitaxial Growth

    Semicorex is a leading supplier and manufacturer of MOCVD Susceptor for Epitaxial Growth. Our product is widely used in semiconductor industries, particularly in the growth of the epitaxial layer on the wafer chip. Our susceptor is designed to be used as the center plate in MOCVD, with a gear or ring-shaped design. The product has high heat and corrosion resistance, making it stable in extreme environments.
  • CVD SiC Coated Graphite Pancake Susceptor

    CVD SiC Coated Graphite Pancake Susceptor

    Semicorex provides high-quality CVD SiC coated graphite pancake susceptor. We have been manufacturer and supplier of graphite materials for many years. Our CVD SiC coated graphite pancake susceptor has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Susceptor Semiconductor

    Susceptor Semiconductor

    Semicorex Susceptor Semiconductor, a revolutionary graphite susceptor meticulously crafted to elevate your semiconductor manufacturing to new heights. Engineered with precision and innovation, this susceptor boasts a CVD SiC coating that sets it apart in the industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Carbide Seal Ring

    Silicon Carbide Seal Ring

    Semicorex Silicon Carbide Seal Ring has emerged as a critical enabling technology within the semiconductor industry, offering unparalleled performance and reliability in the face of increasingly demanding process conditions. Their unique combination of material properties makes it ideal for a wide range of applications, ensuring optimal equipment uptime, extended component lifecycles, and ultimately, lower total cost of ownership. We at Semicorex are dedicated to manufacturing and supplying high-performance Silicon Carbide Seal Ring that fuses quality with cost-efficiency.**
  • Epitaxial Susceptor

    Epitaxial Susceptor

    Semicorex Epitaxial Susceptor with SiC coating is designed to support and hold SiC wafers during the epitaxial growth process, ensuring precision and uniformity in semiconductor manufacturing. Choose Semicorex for its high-quality, durable, and customizable products that meet the rigorous demands of advanced semiconductor applications.*
  • 8-inch P-type SiC Wafers

    8-inch P-type SiC Wafers

    Semicorex 8-inch P-type SiC wafers deliver outstanding performance for next-generation power, RF, and high-temperature devices. Choose Semicorex for superior crystalline quality, industry-leading uniformity, and trusted expertise in advanced SiC materials.*
  • Related Blog
  • Reviews

  • What is P-type SiC wafer?

    A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

  • SiC Epitaxy

    There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

  • Difficulties in GaN preparation

    As a third-generation semiconductor material, Gallium Nitride is often compared with Silicon Carbide. Gallium Nitride still demonstrates its superiority with its large bandgap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity and strong radiation resistance. But it is undeniable that, like Silicon Carbide, Gallium Nitride also has various technical difficulties.

  • Thin film growth process

    Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

  • Why Choose Pressureless Sintering for SiC Ceramic Preparation?

    The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

  • Nearly $840 Million: Onsemi Acquires a SiC Company

    Today, Onsemi announced on its official website that it has reached an agreement with Qorvo to acquire the SiC JFET technology business and Qorvo's subsidiary.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept