China High-Temperature Seals Manufacturers, Suppliers, Factory

PBN, or pyrolytic boron nitride, belongs to the hexagonal system and is an advanced inorganic non-metallic material with a purity of up to 99.999%.

SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

As technology nodes continue to shrink, the formation of ultra-shallow junctions presents significant challenges. Thermal annealing processes including Rapid thermal annealing (RTA) and flash lamp annealing (FLA) are vital techniques that maintain high impurity activation rates while minimizing diffusion, ensuring optimal device performance.

The tray (base) that supports SiC wafers, also known as a "susceptor," is a core component of semiconductor manufacturing equipment. And what exactly is this susceptor that carries the wafers?

The degree of graphitization is an essential measure used to assess how close carbon atoms are to forming a tightly-packed hexagonal graphite crystal structure.