English
Home > Products > 300mm Silicon Wafer

China 300mm Silicon Wafer Manufacturers, Suppliers, Factory

Our rewards are lessen selling prices,dynamic sales team,specialized QC,solid factories,high quality services for 300mm Silicon Wafer,Crystal Growing,Graphite Plate,Epitaxial Wafer Manufacturers,SiC Epi Wafer, Any calls for from you'll be paid with our best interest!
300mm Silicon Wafer, High output volume, top quality, timely delivery and your satisfaction are guaranteed. We welcome all inquiries and comments. If you are interested in any of our items or have an OEM order to fulfill, make sure you feel free to contact us now. Working with us will save you money and time.

Related Products

Hot Products

  • Inductively-Coupled Plasma (ICP)

    Inductively-Coupled Plasma (ICP)

    Semicorex's silicon carbide coated susceptor for Inductively-Coupled Plasma (ICP) is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate

    4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafer substrates for many years. Our 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Process Tube for Diffusion Furnaces

    Process Tube for Diffusion Furnaces

    Semicorex process tube for diffusion furnaces is a specialized component used in the manufacturing of semiconductor devices. It is designed to provide a controlled environment for diffusion processes, where impurities are introduced into the semiconductor wafers to modify their electrical properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • GaN Epitaxy Carrier

    GaN Epitaxy Carrier

    The Semicorex GaN Epitaxy Carrier is pivotal in semiconductor manufacturing, integrating advanced materials and precision engineering. Distinguished by its CVD SiC coating, this carrier offers exceptional durability, thermal efficiency, and protective capabilities, establishing itself as a standout in the industry. We at Semicorex are dedicated to manufacturing and supplying high-performance GaN Epitaxy Carrier that fuse quality with cost-efficiency.
  • SiC Diffusion Furnace Tube

    SiC Diffusion Furnace Tube

    The advanced material properties of Semicorex SiC Diffusion Furnace Tube, including high flexural strength, outstanding oxidation and corrosion resistance, high wear resistance, low friction coefficient, superior high-temperature mechanical properties, and ultra-high purity, make it indispensable in the semiconductor industry, particularly for diffusion furnace applications. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Diffusion Furnace Tube that fuse quality with cost-efficiency.**
  • TaC Coating Wafer Chuck

    TaC Coating Wafer Chuck

    Semicorex TaC Coating Wafer Chuck stands as the pinnacle of innovation in the semiconductor epitaxy process, a critical phase in semiconductor manufacturing. With our commitment to delivering top-quality products at competitive prices, we are poised to be your long-term partner in China.*
  • Related Blog
  • Reviews

  • What is SiC epitaxy?

    Silicon Carbide (SiC) epitaxy is a key technology in the field of semiconductors, particularly for the development of high-power electronic devices. SiC is a compound semiconductor with a wide bandgap, which makes it ideal for applications that require a high-temperature and high-voltage operation.

  • What is CVD process in semiconductor?

    Chemical vapor deposition CVD refers to the introduction of two or more gaseous raw materials into a reaction chamber under vacuum and high temperature conditions, where the gaseous raw materials react with each other to form a new material, which is deposited on the wafer surface.

  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • What are SiC-coated graphite susceptors?

    The tray (base) that supports SiC wafers, also known as a "susceptor," is a core component of semiconductor manufacturing equipment. And what exactly is this susceptor that carries the wafers?

  • Plasma Processes in CVD Operations

    Chemical Vapor Deposition (CVD) refers to a process technology where multiple gaseous reactants at varied partial pressures undergo a chemical reaction under specific temperature and pressure conditions. The resulting solid substance deposits on the surface of the substrate material, thereby obtaining the desired thin film. In traditional integrated circuit manufacturing processes, the obtained thin film materials are generally compounds such as oxides, nitrides, carbides, or materials like polycrystalline silicon, amorphous silicon, etc.

  • Thin film growth process

    Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept