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    SiC Coated PSS Etching Carrier

    Wafer carriers used in epixial growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex SiC Coated PSS Etching Carrier engineered specifically for these demanding epitaxy equipment applications. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Gas Inlet Ring for Semiconductor Equipment

    Gas Inlet Ring for Semiconductor Equipment

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our Gas Inlet Ring for Semiconductor Equipment has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Second Half Parts for Lower Baffles in Epitaxial Process

    Second Half Parts for Lower Baffles in Epitaxial Process

    Semicorex Second Half Parts for Lower Baffles in Epitaxial Process, meticulously engineered components designed to revolutionize the performance of your semiconductor devices. Specifically tailored for the intake system of LPE reactors, these semi-cylindrical fittings play a pivotal role in enhancing the epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Alumina Ceramic Wafer Chucks

    Alumina Ceramic Wafer Chucks

    Semicorex Alumina Ceramic Wafer Chucks not limited to a single industry; their unique properties make them suitable for a wide range of applications. In the semiconductor sector, they are used for holding wafers during chip fabrication. In the chemical industry, their corrosion resistance makes them ideal for handling aggressive substances. Environmental applications benefit from their stability and resistance to wear, while their mechanical properties are leveraged in the development of functional materials.We at Semicorex are dedicated to manufacturing and supplying high-performance Alumina Ceramic Wafer Chucks that fuse quality with cost-efficiency.
  • Silicon Carbide Ceramic Structural Parts

    Silicon Carbide Ceramic Structural Parts

    Semicorex Silicon Carbide Ceramic Structural Parts, gained from grains of silicon carbide bonded together by sintering, find extensive usage in the automotive, mechanical, chemical, semiconductor, space technology, microelectronics, and energy sectors, fulfilling critical roles in diverse applications across these industries. Due to their remarkable properties, Silicon Carbide Ceramic Structural Parts have become an ideal material for harsh conditions characterized by high temperatures, high pressures, corrosion, and abrasion, providing reliable performance and longevity in challenging operational environments.**
  • Silicon Carbide Sleeve

    Silicon Carbide Sleeve

    Semicorex Silicon Carbide Sleeve is commonly used as a wear-resistant and corrosion-resistant liner for equipment such as cylinders, pumps, valves, sliding bearings, and grinder drums.
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  • TSMC: 2nm process risk trial production next year

    In their newly released annual report, TSMC Chairman Deyin Liu and CEO Chieh-Jia Wei revealed the progress related to the 2nm process.

  • Advantages and Disadvantages of Gallium Nitride (GaN) Applications

    As the world looks for new opportunities in semiconductors, gallium nitride continues to stand out as a potential candidate for future power and RF applications. However, for all the benefits it offers, it still faces a major challenge; there are no P-type (P-type) products. Why is GaN touted as the next major semiconductor material, why is the lack of P-type GaN devices a major drawback, and what does this mean for future designs?

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

  • The Study on Reaction-Sintered SiC Ceramics and Their Properties

    Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.

  • Application of GaN

    There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.

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