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China Siliconized Silicon Carbide Manufacturers, Suppliers, Factory

Bear "Customer very first, Quality first" in mind, we work closely with our customers and supply them with efficient and professional services for Siliconized Silicon Carbide,Semiconductor Materials,SiC Wafer,Deposition Semiconductor,Epitaxy Wafer, We have been self-assured to make excellent achievements within the future. We've been looking forward to becoming one within your most trusted suppliers.
Siliconized Silicon Carbide, Our company has already have pass the ISO standard and we're fully respect our customer 's patents and copyrights. If the customer provides their own designs, We will guarantee that they will likely be the only one can have that merchandise. We hoping that with our good products can bring our customers a great fortune.

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    Barrel Susceptor for Liquid Phase Epitaxy

    If you need a graphite susceptor that can perform reliably and consistently in even the most demanding high-temperature and corrosive environments, the Semicorex Barrel Susceptor for Liquid Phase Epitaxy is the perfect choice. Its silicon carbide coating provides excellent thermal conductivity and heat distribution, ensuring exceptional performance in semiconductor manufacturing applications.
  • Etching Carrier Holder for PSS Etching

    Etching Carrier Holder for PSS Etching

    Semicorex's Etching Carrier Holder for PSS Etching is engineered for the most demanding epitaxy equipment applications. Our ultra-pure graphite carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The SiC coated carrier has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • RTP SiC Coating Carrier

    RTP SiC Coating Carrier

    Semicorex RTP SiC Coating Carrier offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With its high-quality SiC coated graphite, this product is designed to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.
  • Ring Set

    Ring Set

    Unlock the full potential of your semiconductor epitaxial processes with Semicorex Ring Set – a crucial component crafted from SiC-coated graphite. Designed to elevate the efficiency and reliability of your epitaxial growth, this small yet powerful accessory plays a key role in ensuring optimal performance within semiconductor manufacturing environments.
  • SiC Guide Ring

    SiC Guide Ring

    Semicorex SiC Guide Ring is engineered to optimize the single crystal growth process. Its exceptional thermal conductivity ensures uniform heat distribution, contributing to the formation of high-quality crystals with enhanced purity and structural integrity. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • Porous Graphite with TaC Coating

    Porous Graphite with TaC Coating

    Semicorex Porous Graphite with TaC Coating is a specialized material designed to address critical challenges in the growth of Silicon Carbide (SiC) crystals. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
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  • How to classify semiconductors

    There are six classifications for semiconductors, which are classified by product standard, processing signal type, manufacturing process, usage function, application field, and design method.

  • What is P-type SiC wafer?

    A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • What is the Difference Between Epitaxial and Diffused Wafers

    Both epitaxial and diffused wafers are essential materials in semiconductor manufacturing, but they differ significantly in their fabrication processes and target applications. This article delves into the key distinctions between these wafer types.

  • Why Is There Increasing Demand for High-Thermal Conductivity SiC Ceramics in the Semiconductor Industry?

    Currently, silicon carbide (SiC) is a highly active area of research in thermal conductive ceramic materials both domestically and internationally.

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