Silicon Carbide Sic Graphite Crucible for LPE

If you need a graphite susceptor that can perform reliably and consistently in even the most demanding high-temperature and corrosive environments, the Semicorex Barrel Susceptor for Liquid Phase Epitaxy is the perfect choice. Its silicon carbide coating provides excellent thermal conductivity and heat distribution, ensuring exceptional performance in semiconductor manufacturing applications.

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Product Description

That has a positive and progressive attitude to customer's fascination, our enterprise constantly improves our merchandise high quality to meet the demands of customers and further focuses on safety, reliability, environmental requirements, and innovation of Silicon Carbide Sic Graphite Crucible, Through our hard work, we have always been on the forefront of clean technology product innovation. We are a green partner you can rely on. Contact us today for more information! Silicon Carbide Sic Graphite Crucible Silicon Carbide Crucible, Crucible, Graphite Crucible, We welcome you to visit our company and factory. It is also convenient to visit our website. Our sales team will present you the best service. If you have to have more information, remember to feel free to contact us by E-mail or telephone. We have been sincerely hope to establish a good long-term business relationship with you through this opportunity, based on equal, mutual benefit from now till the future.

The Semicorex Silicon Carbide Sic Graphite Crucible for LPE is the go-to choice for semiconductor manufacturing applications that require high heat and corrosion resistance. Its high-purity SiC coating and exceptional thermal conductivity provide superior protection and heat distribution properties, ensuring reliable and consistent performance in even the most challenging environments.

Our Silicon Carbide Sic Graphite Crucible for LPE is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.

Parameters of Silicon Carbide Sic Graphite Crucible for LPE

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of Silicon Carbide Sic Graphite Crucible for LPE

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.

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