CVD Chemical Vapor Deposition Furnaces

Semicorex CVD Chemical Vapor Deposition furnaces designed for CVD and CVI, are used to deposit materials onto a substrate. The reaction temperatures up to 2200°C. Mass flow controls and modulating valves coordinate reactant and carrier gases like N, H, Ar, CO2, methane, silicon tetrachloride, methyl trichlorosilane, and ammonia. Materials deposited include silicon carbide, pyrolytic carbon, boron nitride, zinc selenide, and zinc sulfide. CVD Chemical Vapor Deposition furnaces have both horizontal and vertical structures.

Application: SiC coating for C/C composite material, SiC coating for graphite, SiC, BN and ZrC coating for fiber and etc.

Features of Semicorex CVD Chemical Vapor Deposition furnaces

1.Robust design made of high-quality materials for long-term use;

2.Precisely controlled gas delivery through the use of mass flow controllers and high-quality valves;

3.Equipped with safety features such as over-temperature protection and gas leak detection for safe and reliable operation;

4.Using multiple temperature control zones, great temperature uniformity;

5.Specially designed deposition chamber with good sealing effect and great anti-contamination performance;

6.Using multiple deposition channels with uniform gas flow, without deposition dead corners and perfect deposition surface;

7.It has treatment for the tar, solid dust, and organic gases during the deposition process

*The above parameters can be adjusted to the process requirements, they are not as acceptance standard, the detail spec. will be stated in the technical proposal and agreements.