C/C Heater

In advanced semiconductor and photovoltaic manufacturing, precise thermal control is essential for achieving high-quality crystal structures. Semicorex C/C Heater (Carbon/Carbon Main Heater) is engineered to deliver exceptional thermal uniformity and stability, making it a critical component in high-temperature crystal growth systems.

The C/C Heater shown above features a segmented ring structure with precision-cut slots, designed to optimize current distribution and thermal radiation. This configuration enables highly uniform heat generation across the heating zone, effectively minimizing thermal gradients and supporting consistent crystal growth conditions. It is widely used in processes such as monocrystalline silicon (CZ method) and polycrystalline silicon production, where temperature accuracy directly impacts material quality and yield.

Traditional graphite heaters often struggle with mechanical longevity and thermal deformation over repeated high-temperature cycles. C/C composites, reinforced with high-strength carbon fibers, offer a superior alternative. By utilizing a carbon matrix reinforced by carbon fibers, the C/C heater maintain exceptional structural integrity while delivering the precise temperature gradients necessary to control the melt-solid interface during silicon ingot growth.

Key Specifications:

Density: ≥1.50 g/cm³

Thermal Conductivity (RT): ≥40 W/(m·K)

Electrical Resistivity (RT): 20–30 μΩ·m

Electrical Resistivity (High Temp): 14–20 μΩ·m

Key Advantages for Silicon Growth

1. Exceptional Thermal Uniformity

The primary function of the C/C Main Heater is to provide a symmetrical heat distribution. In monocrystalline silicon growth, even a slight fluctuation in the temperature gradient can lead to oxygen precipitation issues or dislocations. The fiber-reinforced structure of our heaters ensures that heat is radiated evenly across the crucible, promoting a stable growth rate.

2. Enhanced Chemical Purity

Contamination is the enemy of semiconductor efficiency. Our C/C heaters undergo high-temperature purification processes to ensure ash content is kept to a minimum (typically <20ppm). This prevents metallic impurities from leaching into the silicon melt, ensuring the high resistivity and carrier lifetime required for N-type or P-type wafers.

3. Longevity and Cost-Efficiency

Compared to standard isostatic graphite, C/C composites possess a much higher strength-to-weight ratio. They are highly resistant to thermal shock and do not become brittle after prolonged use at temperatures exceeding 1500℃. This durability results in fewer furnace teardowns and lower total cost of ownership for fab operators.

Applications in the Semiconductor Industry

While primarily utilized as the central heating element in Silicon Drawers (CZ Furnaces), these C/C heaters are also integral to:

Polysilicon Reduction Furnaces: Providing stable heat for the chemical vapor deposition process.

High-Temperature Vacuum Furnaces: For sintering and annealing of advanced ceramic materials.