Semiconductor-Grade Quartz Crucibles

Semicorex semiconductor-grade quartz crucibles are manufactured using the electric arc melting process. Their three-layer composite structure comprises the inner high-purity transparent layer, the intermediate transition layer, and the outer bubble composite layer. These layers work synergistically to create superior mechanical strength, optimized thermal management performance, and cost-effectiveness.

The Advantages of Semiconductor-Grade Quartz Crucibles

1. High Purity:

Semiconductorex semiconductor-grade quartz crucibles possess unparalleled ultra-high purity, with impurity content (e.g., Al, Fe, Ca, Mg) strictly controlled at the ppm or even ppb level. This purity control effectively avoids impurity contamination during the monocrystalline silicon growth process, thus safeguarding the electrical performance and yield of semiconductor silicon wafers from the source.

2. Excellent High Temperature Resistance

Semicorex semiconductor-grade quartz crucibles can be continuously used at the 1100℃ high-temperature environment and can withstand short-term high temperatures of 1450℃. Thanks to this property, Semicorex semiconductor-grade quartz crucibles can fully meet the high-temperature requirements of semiconductor manufacturing, greatly avoiding crystal pulling failure caused by high-temperature deformation or softening.

3. Exceptional Thermal Stability

Semicorex semiconductor-grade quartz crucibles have a low coefficient of thermal expansion, which enables them to maintain structural stability during rapid heating or cooling and minimizes cracking or deformation due to thermal stress. Additionally, benefiting from their excellent thermal conductivity, Semicorex semiconductor-grade quartz crucibles can help achieve a uniform and stable temperature field distribution, thereby improving the quality and consistency of monocrystalline silicon rods.

4. Low Bubble Content in the Inner Layer

The inner transparent layer of Semicorex semiconductor-grade quartz crucibles can achieves extremely low bubble density through stringent control. This can minimize the interference of bubble expansion and rupture during operation on the growth of monocrystalline silicon, thereby reducing the defect rate of monocrystalline silicon rods.