Silicon Carbide Sic Graphite Crucible

With its exceptional thermal conductivity and heat distribution properties, the Semicorex Barrel Structure for Semiconductor Epitaxial Reactor is the perfect choice for use in LPE processes and other semiconductor manufacturing applications. Its high-purity SiC coating provides superior protection in high-temperature and corrosive environments.

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Product Description

Our solutions are broadly acknowledged and dependable by users and may meet consistently developing economic and social requires for Silicon Carbide Sic Graphite Crucible, We welcome clients, business enterprise associations and mates from all pieces from the earth to make contact with us and request cooperation for mutual advantages. Silicon Carbide Sic Graphite Crucible Silicon Carbide Crucible, Crucible, Graphite Crucible, We put the product quality and customer's benefits to the first place. Our experienced salesmen supply prompt and efficient service. Quality control group make sure the best quality. We believe quality comes from detail. If you have demand, let us work together to get success.

The Semicorex Silicon Carbide Sic Graphite Crucible is the go-to choice for high-performance graphite susceptor applications that require exceptional heat and corrosion resistance. Its high-purity SiC coating and superior density and thermal conductivity provide superior protection and heat distribution properties, ensuring reliable and consistent performance in even the most challenging environments.

Our Silicon Carbide Sic Graphite Crucible is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.

Parameters of Silicon Carbide Sic Graphite Crucible

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of Silicon Carbide Sic Graphite Crucible

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.

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