Silicon Carbide Sic Graphite Crucible graphite susceptor for wafer epitaxy

Semicorex is a leading manufacturer and supplier of SiC Coated MOCVD Susceptor. Our product is specially designed for semiconductor industries to grow the epitaxial layer on the wafer chip. The high purity Silicon Carbide coated graphite carrier is used as the center plate in MOCVD, with a gear or ring-shaped design. Our susceptor is widely used in MOCVD equipment, ensuring high heat and corrosion resistance, and great stability in extreme environments.

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Product Description

Well-run tools, qualified sales crew, and superior after-sales providers; We are also a unified huge spouse and children, all people keep on with the corporate value "unification, devotion, tolerance" for Silicon Carbide Sic Graphite Crucible graphite susceptor for wafer epitaxy, We're looking ahead to forming thriving business enterprise relationship with new clients in the in the vicinity of future! Silicon Carbide Sic Graphite Crucible graphite susceptor for wafer epitaxy Silicon Carbide Crucible, Crucible, Graphite Crucible, graphite susceptor for wafer epitaxy Our product quality is one of the major concerns and has been produced to meet the customer's standards. "Customer services and relationship" is another important area which we understand good communication and relationships with our customers is the most significant power to run it as a long term business.

One of the most significant features of our Silicon Carbide Sic Graphite Crucible graphite susceptor for wafer epitaxy is that it ensures coating on all surface, avoiding peeling off. The product has high-temperature oxidation resistance, which is stable at high temperatures up to 1600°C. The high purity is achieved by using CVD chemical vapor deposition under high-temperature chlorination conditions. The product has a dense surface with fine particles, making it highly resistant to corrosion from acid, alkali, salt, and organic reagents.
Our Silicon Carbide Sic Graphite Crucible graphite susceptor for wafer epitaxy ensures the best laminar gas flow pattern, which guarantees evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip. Semicorex offers a competitive price advantage and covers many of the European and American markets. Our team is dedicated to providing excellent customer service and support. We are committed to becoming your long-term partner, providing high-quality and reliable products to help your business grow.

Parameters of Silicon Carbide Sic Graphite Crucible graphite susceptor for wafer epitaxy

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of Silicon Carbide Sic Graphite Crucible graphite susceptor for wafer epitaxy

- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion

Hot Tags: Silicon Carbide Crucible, Crucible, Graphite Crucible, graphite susceptor for wafer epitaxy

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