Silicon Carbide Sic Ceramic Plates

Semicorex SiC Coated Plate Carriers for MOCVD is a high-quality carrier designed for use in the semiconductor manufacturing process. Its high purity, excellent corrosion resistance, and even thermal profile make it an excellent choice for those looking for a carrier that can withstand the demands of the semiconductor manufacturing process.

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Product Description

Every single member from our large efficiency profits team values customers' requirements and organization communication for Silicon Carbide Sic Ceramic Plates, In addition, we would properly guideline the shoppers about the application techniques to adopt our products and solutions as well as the way to select appropriate materials. Silicon Carbide Sic Ceramic Plates Sic Sheet, Silicon Carbide Plate, Silicon Carbide Disc, Regarding quality as survival, prestige as guarantee, innovation as motive force, development along with advanced technology, our group hopes to make progress together with you and make untiring efforts for the bright future of this industry.

Our Silicon Carbide Sic Ceramic Plates features high purity, making it an excellent choice for those looking for a carrier that is highly uniform and consistent in its properties.
Our Silicon Carbide Sic Ceramic Plates made with a high-purity silicon carbide coating on graphite, which makes it highly resistant to oxidation at high temperatures of up to 1600°C. The CVD chemical vapor deposition process used in its manufacturing ensures high purity and excellent corrosion resistance. It is highly corrosion-resistant, with a dense surface and fine particles, making it resistant to acid, alkali, salt, and organic reagents. Its high-temperature oxidation resistance ensures stability at high temperatures up to 1600°C.

Parameters of Silicon Carbide Sic Ceramic Plates

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of SiC Coated Graphite Susceptor for MOCVD

- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion

Hot Tags: Sic Sheet, Silicon Carbide Plate, Silicon Carbide Disc

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