Silicon Carbide Planetary susceptor for SiC epitaxial

Silicon Carbide Planetary susceptor for SiC epitaxial

Semicorex is a trusted name in the semiconductor industry, providing high-quality MOCVD Planet Susceptor for Semiconductor. Our product is designed to meet the specific needs of semiconductor manufacturers looking for a carrier that can deliver excellent performance, stability, and durability. Contact us today to learn more about our product and how we can help you with your semiconductor manufacturing needs.

Send Inquiry

Product Description

Our enterprise insists all along the quality policy of "product high-quality is base of organization survival; customer gratification will be the staring point and ending of an company; persistent improvement is eternal pursuit of staff" and also the consistent purpose of "reputation very first, purchaser first" for Silicon Carbide Planetary susceptor for SiC epitaxial, In addition, we would properly tutorial the purchasers about the application techniques to adopt our items plus the way to select appropriate materials. Silicon Carbide Planetary susceptor for SiC epitaxial, Sic Epi Wafer Supplier, Silicon Carbide Substrate, Planetary susceptor. Our solutions have national accreditation requirements for qualified, good quality things, affordable value, was welcomed by individuals all over the world. Our goods will continue to improve inside the order and appear forward to cooperation with you, Genuinely should any of those products be of curiosity to you, remember to letus know. We'll be satisfied to supply you a quotation up on receipt of the comprehensive needs.

Our Silicon Carbide Planetary susceptor for SiC epitaxial features high temperature oxidation resistance, ensuring its stability at high temperatures up to 1600°C. It is also highly pure, made by CVD chemical vapor deposition under high-temperature chlorination conditions, ensuring the uniformity and consistency of the product, even thermal profile and laminar gas flow pattern.
Contact us today to learn more about our Silicon Carbide Planetary susceptor for SiC epitaxial.


Parameters of Silicon Carbide Planetary susceptor for SiC epitaxial

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of SiC Coated Graphite Susceptor for MOCVD

- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion




Hot Tags: Sic Epi Wafer Supplier, Silicon Carbide Substrate, Planetary susceptor

Send Inquiry

Please Feel free to give your inquiry in the form below. We will reply you in 24 hours.
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept