Sic Grinding Barrel Silicon Carbide Ceramic Bushing

The Semicorex Carbide-Coated Reactor Barrel Susceptor is a premium quality graphite product coated with high-purity SiC, designed specifically for LPE processes. With excellent heat and corrosion resistance, this product is perfect for use in semiconductor manufacturing applications.

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Product Description

"Based on domestic market and expand abroad business" is our enhancement strategy for Sic Grinding Barrel Silicon Carbide Ceramic Bushing, In our efforts, we already have many shops in China and our products have won praise from customers worldwide. Welcome new and old customers to contact us for the future long term business relationships. Sic, Sisic, Rbsic, We are proud to supply our items to every costumer all around the world with our flexible, fast efficient services and strictest quality control standard which has always approved and praised by customers.

If you're looking for a high-performance graphite susceptor for epitaxial layer formation on semiconductor wafers, the Semicorex Sic Grinding Barrel Silicon Carbide Ceramic Bushing is an excellent choice. Its silicon carbide coating provides superior heat distribution and thermal conductivity, ensuring exceptional performance in even the most demanding high-temperature environments.

At Semicorex, we focus on providing high-quality, cost-effective Sic Grinding Barrel Silicon Carbide Ceramic Bushing, we prioritize customer satisfaction and provide cost-effective solutions. We look forward to becoming your long-term partner, delivering high-quality products and exceptional customer service.

Parameters of Sic Grinding Barrel Silicon Carbide Ceramic Bushing

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of Sic Grinding Barrel Silicon Carbide Ceramic Bushing

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.

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