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$Sic Ceramic Grinding Barrel Refractory Silicon Carbide Cylinder for Grinding Miller$

Sic Ceramic Grinding Barrel Refractory Silicon Carbide Cylinder for Grinding Miller

With its exceptional thermal conductivity and heat distribution properties, the Semicorex Barrel Structure for Semiconductor Epitaxial Reactor is the perfect choice for use in LPE processes and other semiconductor manufacturing applications. Its high-purity SiC coating provides superior protection in high-temperature and corrosive environments.

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Product Description

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The Semicorex Sic Ceramic Grinding Barrel Refractory Silicon Carbide Cylinder for Grinding Miller is the go-to choice for high-performance graphite susceptor applications that require exceptional heat and corrosion resistance. Its high-purity SiC coating and superior density and thermal conductivity provide superior protection and heat distribution properties, ensuring reliable and consistent performance in even the most challenging environments.

Our Sic Ceramic Grinding Barrel Refractory Silicon Carbide Cylinder for Grinding Miller is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.

Contact us today to learn more about our Sic Ceramic Grinding Barrel Refractory Silicon Carbide Cylinder for Grinding Miller.

Parameters of Sic Ceramic Grinding Barrel Refractory Silicon Carbide Cylinder for Grinding Miller

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of Sic Ceramic Grinding Barrel Refractory Silicon Carbide Cylinder for Grinding Miller

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.

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