SiC plate refractory for tunnel kiln

Semicorex's Silicon Etch Plate for PSS Etching Applications is a high-quality, ultra-pure graphite carrier that is specifically designed for epitaxial growth and wafer handling processes. Our carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The silicon etch plate for PSS etching applications has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.

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Product Description

We constantly function like a tangible group to ensure that we can give you the very best high-quality and also the very best cost for SiC plate refractory for tunnel kiln, With the eternal goal of "continuous quality improvement, customer satisfaction", we are sure that our product quality is stable and reliable and our products are best-selling at home and abroad. SiC plate refractory for tunnel kiln Refractory Ceramics, Kiln Furniture, High Temperature Resistance, Our solutions are widely recognized and trusted by users and can meet continuously changing of economic and social needs. We welcome new and old customers from all walks of life to contact us for future business relationships and mutual success!

Semicorex's SiC plate refractory for tunnel kiln is engineered for the most demanding epitaxy equipment applications. Our ultra-pure graphite carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The SiC coated carrier has excellent heat distribution properties, high thermal conductivity, and is cost-effective.

Parameters of SiC plate refractory for tunnel kiln

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300