Semiconductors 8-Inch Silicon Wafer, P/N Type Silicium Wafer N-type SiC wafer

Semicorex provides N-type SiC ingot with 4 inches, 6 inches and 8 inches. We have been manufacturer and supplier of wafers for many years. Our 4" 6" 8" N-type SiC Ingot has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

Being supported by an advanced and specialist IT team, we could give technical support on pre-sales & after-sales services for Semiconductors 8-Inch Silicon Wafer, P/N Type Silicium Wafer N-type SiC wafer, The concept of our company is "Sincerity, Speed, Service, and Satisfaction". We'll follow this concept and win far more and much more customers' pleasure. Semiconductors 8-Inch Silicon, Silicon Wafers, Silicon Substrates, Our company has abundant strength and possesses a steady and perfect sales network system. We wish we could establish sound business relationships with all customers from at home and abroad on the basis of mutual benefits.

Semicorex provides Semiconductors 8-Inch Silicon Wafer, P/N Type Silicium Wafer N-type SiC wafer. We have been manufacturer and supplier of wafers for many years.

4 Inch N-type SiC Ingot Specification
Items			Production Grade			Dummy Grade
Polytype			4H
Dopant			n-type Nitrogen
Resistivity			0.015~0.025 ohm ·cm			0.015~0.028 ohm ·cm
Diameter			100.25±0.25 mm
Thickness			≥15 mm
Surface orientation error			4°toward<11-20>±0.2°
Primary flat orientation			[1- 100]±5.0°
Primary flat length			32.5±1.5 mm
Secondary flat			90.0°CW from Primary ±5.0°, silicon face up
Secondary flat length			18±1.5 mm
Micropipe density			≤0.5 ea/cm2			≤10 ea/cm2
BPD			≤2000 ea/cm2			--
TSD			≤500 ea/cm2			--
Edge Cracks			≤3 ea，≤1mm/ea			≤5 ea，≤3mm/ea
Polytype areas			None			≤5% area
Edge indents			≤3 ea，≤1mm width and depth			≤5 ea，≤2mm width and depth
Label			C-face
Packaging			unit-ingot cassette, vacuum packaging
6 Inch N-type SiC Ingot Specification
Items		Production Grade			Dummy Grade
Polytype		4H
Dopant		n-type Nitrogen
Resistivity		0.015~0.025			0.015~0.028
Diameter		150.25±0.25 mm
Thickness		≥15 mm
Surface orientation error		4°toward<11-20>±0.2°
Primary flat orientation		[1- 100]±5.0°
Primary flat length		47.5±1.5 mm
Micropipe density		≤0.5 ea/cm2			≤10 ea/cm2
BPD		≤2000 ea/cm2			--
TSD		≤500 ea/cm2			--
Edge Cracks		≤3 ea，≤1mm/ea			≤5 ea，≤3mm/ea
Polytype areas		None			≤5% area
Edge indents		≤3 ea，≤1mm width and depth			≤5 ea，≤2mm width and depth
Label		C-face
Packaging		unit-ingot cassette, vacuum packaging
8 Inch N-type SiC Ingot Specification
Items	Production Grade			Research Grade			Dummy Grade
Polytype	4H
Dopant	n-type Nitrogen
Resistivity	0.015~0.028			0.01~0.04			NA
Diameter	200.25±0.25 mm
Thickness	NA
Surface orientation error	4°toward<11-20>±0.5°
Notch orientation	[1- 100]±5.0°
Notch depth	1~1.5 mm
Micropipe density	≤2 ea/cm2			≤10 ea/cm2			≤50 ea/cm2
BPD	≤2000 ea/cm2			≤500 ea/cm2			--
TSD	≤500 ea/cm2			≤1000 ea/cm2			--
Edge Cracks	≤3 ea，≤1mm/ea			≤4 ea，≤2mm/ea			≤5 ea，≤3mm/ea
Polytype areas	None			≤20% area			≤30% area
Edge indents	≤3 ea，≤1mm width and depth			≤4 ea，≤2mm width and depth			≤5 ea，≤2mm width and depth
Label	C-face
Packaging	unit-ingot cassette, vacuum packaging

Hot Tags: Silicon, Silicon Wafers, Silicon Substrates

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