Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Ceramic Axle Sleeve has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
Silicon carbide (SiC) is a synthetic, semiconducting fine ceramic that excels in a wide cross-section of industrial markets. Semicorex Recrystallized Sic Silicon Carbide Ceramic Plate, Sic Plate Refractory for Tunnel Kilnsic Refractory Plate, High Temperature Silicon Carbide Ceramic has the availability of both high-density and open porous structures, also combined with the material’s outstanding high-temperature strength and thermal shock resistance, alongside inherently impressive mechanical properties. We can process all kinds of Recrystallized Sic Silicon Carbide Ceramic Plate, Sic Plate Refractory for Tunnel Kilnsic Refractory Plate, High Temperature Silicon Carbide Ceramic to customers’requirements.
Parameters of Recrystallized Sic Silicon Carbide Ceramic Plate, Sic Plate Refractory for Tunnel Kilnsic Refractory Plate, High Temperature Silicon Carbide Ceramic
|
Technical Properties |
||||
|
Index |
Unit |
Value |
||
|
Material Name |
Reaction Sintered Silicon Carbide |
Pressureless Sintered Silicon Carbide |
Recrystallized Silicon Carbide |
|
|
Composition |
RBSiC |
SSiC |
R-SiC |
|
|
Bulk Density |
g/cm3 |
3 |
3.15 ± 0.03 |
2.60-2.70 |
|
Flexural Strength |
MPa (kpsi) |
338(49) |
380(55) |
80-90 (20°C) 90-100(1400°C) |
|
Compressive Strength |
MPa (kpsi) |
1120(158) |
3970(560) |
> 600 |
|
Hardness |
Knoop |
2700 |
2800 |
/ |
|
Breaking Tenacity |
MPa m1/2 |
4.5 |
4 |
/ |
|
Thermal Conductivity |
W/m.k |
95 |
120 |
23 |
|
Coefficient of Thermal Expansion |
10-6.1/°C |
5 |
4 |
4.7 |
|
Specific Heat |
Joule/g 0k |
0.8 |
0.67 |
/ |
|
Max temperature in air |
℃ |
1200 |
1500 |
1600 |
|
Elastic Modulus |
Gpa |
360 |
410 |
240 |
Semicorex produced Recrystallized Sic Silicon Carbide Ceramic Plate, Sic Plate Refractory for Tunnel Kilnsic Refractory Plate, High Temperature Silicon Carbide Ceramic in three forms, Reaction sintered silicon carbide(RBSiC), Pressureless sintered silicon carbide(SSiC) and Recrystal silicon carbide(R-SiC).
The difference between SSiC and RBSiC:
1. Sintering process is different. RBSiC is to infiltrate free Si into silicon carbide at a low temperature, SSiC is formed by natural shrinkage at 2100 degrees.
2. SSiC have smoother surface, higher density and higher strength, for some sealings with more strict surface requirements, SSiC will be better.
3. Different used time under different PH and temperature, SSiC is longer than RBSiC
Features of Recrystallized Sic Silicon Carbide Ceramic Plate, Sic Plate Refractory for Tunnel Kilnsic Refractory Plate, High Temperature Silicon Carbide Ceramic
- High strength (Mohs hardness 9.5, second only to diamond)
- Corrosion resistance to acids, alkalis, salts and organic solvents
- High thermal conductivity, plasma resistance, long life
- Semiconductors
Available shapes of silicon carbide ceramics:
● Ceramic rod / ceramic pin / ceramic plunger
● Ceramic tube / ceramic bushing / ceramic sleeve
● Ceramic ring / ceramic washer / ceramic spacer
● Ceramic disc
● Ceramic plate / ceramic block
● Ceramic ball
● Ceramic piston
● Ceramic nozzle
● Ceramic crucible
● Other custom ceramic parts

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