Plasma Enhance Atomic Layer Deposition System (PEALD) Single-Wafer Deposition System

Semicorex's ICP Plasma Etching Tray is engineered specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers provide even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.

Send Inquiry

Product Description

Our products are broadly regarded and reliable by end users and can meet up with constantly transforming financial and social requires of Plasma Enhance Atomic Layer Deposition System (PEALD) Single-Wafer Deposition System, For further info, you should usually do not hesitate to call us. All inquiries from you might be extremely appreciated. Plasma Enhance Atomic Layer Deposition System (PEALD) Single-Wafer Deposition System Plasma Atomic Layer System, Atomic Layer Deposition System, Atomic Layer Deposition, Meanwhile, we're building up and consummating triangle market & strategic cooperation in order to achieve a multi-win trade supply chain to expand our market vertically and horizontally for a brighter prospects. development. Our philosophy is to create cost-effective products and solutions, promote perfect services, cooperate for long-term and mutual benefits, firm a comprehensive mode of excellent suppliers system and marketing agents, brand strategic cooperation sales system.

Our Plasma Enhance Atomic Layer Deposition System (PEALD) Single-Wafer Deposition System is silicon carbide coated using CVD method, which is the ideal solution for wafer handling processes that require high-temperature and harsh chemical cleaning. Semicorex's carriers feature a fine SiC crystal coating that provides even thermal profiles, laminar gas flow patterns, and prevents contamination or impurities diffusion.
At Semicorex, we focus on providing high-quality, cost-effective products to our customers. Our Plasma Enhance Atomic Layer Deposition System (PEALD) Single-Wafer Deposition System has a price advantage and is exported to many European and American markets. We aim to be your long-term partner, delivering consistent quality products and exceptional customer service.
Contact us today to learn more about our Plasma Enhance Atomic Layer Deposition System (PEALD) Single-Wafer Deposition System.

Parameters of Plasma Enhance Atomic Layer Deposition System (PEALD) Single-Wafer Deposition System

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of Plasma Enhance Atomic Layer Deposition System (PEALD) Single-Wafer Deposition System

- Avoid peeling off and ensure coating on all surface

High temperature oxidation resistance: Stable at high temperatures up to 1600°C

High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.

Corrosion resistance: high hardness, dense surface and fine particles.

Corrosion resistance: acid, alkali, salt and organic reagents.

- Achieve the best laminar gas flow pattern

- Guarantee evenness of thermal profile

- Prevent any contamination or impurities diffusion

Hot Tags: Plasma Atomic Layer System, Atomic Layer Deposition System, Atomic Layer Deposition

Send Inquiry

Please Feel free to give your inquiry in the form below. We will reply you in 24 hours.