Plasma CVD, High Purity Quartz Tubes for Sputtering and Etching

Semicorex's ICP etching wafer holder is the perfect solution for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.

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Product Description

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Looking for a reliable supplier of wafer carriers for your epitaxy equipment? Look no further than Semicorex. Our Plasma CVD, High Purity Quartz Tubes for Sputtering and Etching is engineered specifically for high-temperature, harsh chemical cleaning environments. With a fine SiC crystal coating, our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance.
Our Plasma CVD, High Purity Quartz Tubes for Sputtering and Etching is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.
Contact us today to learn more about our Plasma CVD, High Purity Quartz Tubes for Sputtering and Etching.

Parameters of Plasma CVD, High Purity Quartz Tubes for Sputtering and Etching

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300