Nanowin GaN Epitaxial Wafers Carrier/ GaN on Sic (GaN/SiC)

Semicorex is a leading independently owned manufacturer of Silicon Carbide Coated Graphite, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our GaN-on-SiC Epitaxial Wafers Carrier has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

Our enterprise insists all along the standard policy of "product good quality is base of organization survival; client gratification could be the staring point and ending of an enterprise; persistent improvement is eternal pursuit of staff" and the consistent purpose of "reputation to start with, purchaser first" for Nanowin GaN Epitaxial Wafers Carrier/ GaN on Sic (GaN/SiC), Our items are regularly supplied to lots of Groups and lots of Factories. Meanwhile, our products are sold to the USA, Italy, Singapore, Malaysia, Russia, Poland, plus the Middle East. Nanowin GaN Epitaxial Wafers, Gallium Nitride Epitaxial Wafers, III-V Materials, We have constructed strong and long co-operation relationship with an enormous quantity of companies within this business overseas. Immediate and specialist after-sale service supplied by our consultant group has happy our buyers. Detailed Info and parameters from the merchandise will probably be sent to you for any thorough acknowledge. Free samples may be delivered and company check out to our corporation. n Portugal for negotiation is constantly welcome. Hope to get inquiries type you and construct a long-term co-operation partnership.

Semicorex SiC Coating of Nanowin GaN Epitaxial Wafers Carrier/ GaN on Sic (GaN/SiC) is a dense, wear-resistant silicon carbide (SiC) coating. It has high corrosion and heat resistance properties as well as excellent thermal conductivity. We apply SiC in thin layers onto the graphite using the chemical vapor deposition (CVD) process.
Our Nanowin GaN Epitaxial Wafers Carrier/ GaN on Sic (GaN/SiC) is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.
Contact us today to learn more about our Nanowin GaN Epitaxial Wafers Carrier/ GaN on Sic (GaN/SiC).

Parameters of Nanowin GaN Epitaxial Wafers Carrier/ GaN on Sic (GaN/SiC)

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of Nanowin GaN Epitaxial Wafers Carrier/ GaN on Sic (GaN/SiC)

- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion

Hot Tags: GaN Epitaxial Wafers, Gallium Nitride Epitaxial Wafers, III-V Materials

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