Nanowin 4~8 Inch GaN Epitaxial Wafers Susceptors/GaN Epi Wafers Susceptors/ GaN on Si/ GaN on Sic/ GaN on GaN/ GaN on Sapphire

Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our GaN-on-SiC Substrate susceptors have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

"Control the quality by the details, show the strength by quality". Our company has strived to establish a highly efficient and stable staff team and explored an effective quality control process for Nanowin 4~8 Inch GaN Epitaxial Wafers/GaN Epi Wafers/ GaN on Si/ GaN on Sic/ GaN on GaN/ GaN on Sapphire, Welcome any inquiry to our firm. We will be happy to ascertain helpful business enterprise relationships along with you! Nanowin 4~8 Inch GaN, Gallium Nitride Epitaxial Wafers, III-V Materials, Our Company has specialist engineers and technical staff to answer your questions about maintenance problems, some common failure. Our product quality assurance, price concessions, any questions about the products, You should feel free to contact us.

Nanowin 4~8 Inch GaN Epitaxial Wafers Susceptors/GaN Epi Wafers Susceptors/ GaN on Si/ GaN on Sic/ GaN on GaN/ GaN on Sapphire wafer carriers used in thin film deposition phases or wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex supplies high-purity SiC coated Nanowin 4~8 Inch GaN Epitaxial Wafers Susceptors/GaN Epi Wafers Susceptors/ GaN on Si/ GaN on Sic/ GaN on GaN/ GaN on Sapphire susceptor provides superior heat resistance, even thermal uniformity for consistent epi layer thickness and resistance, and durable chemical resistance. Fine SiC crystal coating provides a clean, smooth surface, critical for handling since pristine wafers contact the susceptor at many points across their entire area.

At Semicorex, we focus on providing high-quality, cost-effective products to our customers. Our Nanowin 4~8 Inch GaN Epitaxial Wafers Susceptors/GaN Epi Wafers Susceptors/ GaN on Si/ GaN on Sic/ GaN on GaN/ GaN on Sapphire susceptor has a price advantage and is exported to many European and American markets. We aim to be your long-term partner, delivering consistent quality products and exceptional customer service.

Parameters of Nanowin 4~8 Inch GaN Epitaxial Wafers Susceptors/GaN Epi Wafers Susceptors/ GaN on Si/ GaN on Sic/ GaN on GaN/ GaN on Sapphire Susceptor

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of Nanowin 4~8 Inch GaN Epitaxial Wafers Susceptors/GaN Epi Wafers Susceptors/ GaN on Si/ GaN on Sic/ GaN on GaN/ GaN on Sapphire Susceptor

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.

Hot Tags: GaN, Gallium Nitride Epitaxial Wafers, III-V Materials

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