Molecular Beam Epitaxy (MBE) Crucible for Crystal Epitaxial Growth

Molecular Beam Epitaxy (MBE) Crucible for Crystal Epitaxial Growth

You can rest assured to buy Silicon Epitaxy Susceptors from our factory. Semicorex's Silicon Epitaxy Susceptor is a high-quality, high-purity product used in the semiconductor industry for epitaxial growth of the wafer chip. Our product has a superior coating technology that ensures the coating is present on all surfaces, preventing peeling off. The product is stable at high temperatures up to 1600°C, making it suitable for use in extreme environments.

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Product Description

We emphasize advancement and introduce new products into the market each year for Molecular Beam Epitaxy (MBE) Crucible for Crystal Epitaxial Growth, Good quality, timely service and Competitive price, all win us a good fame in xxx field despite the international intense competition. Molecular Beam Epitaxy (MBE) Crucible for Crystal Epitaxial Growth Mbe Crucible, Pbn, Pyrolytic Boron Nitride, With the first-class products, excellent service, fast delivery and the best price, we have won highly praise foreign customers'. Our products have been exported to Africa, the Middle East, Southeast Asia and other regions.

Our Molecular Beam Epitaxy (MBE) Crucible for Crystal Epitaxial Growth are made by CVD chemical vapor deposition under high-temperature chlorination conditions, ensuring high purity. The product's surface is dense, with fine particles and high hardness, making it corrosion-resistant to acid, alkali, salt, and organic reagents.
Our product is designed to achieve the best laminar gas flow pattern, guaranteeing the evenness of thermal profile. Our Molecular Beam Epitaxy (MBE) Crucible for Crystal Epitaxial Growth prevent any contamination or impurity diffusion during the epitaxial growth process, ensuring high-quality results.
At Semicorex, we focus on providing high-quality, cost-effective products to our customers. Our Molecular Beam Epitaxy (MBE) Crucible for Crystal Epitaxial Growth have a price advantage and is exported to many European and American markets. We aim to be your long-term partner, delivering consistent quality products and exceptional customer service.


Parameters of Molecular Beam Epitaxy (MBE) Crucible for Crystal Epitaxial Growth

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Parameters of Molecular Beam Epitaxy (MBE) Crucible for Crystal Epitaxial Growth

- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion




Hot Tags: Mbe Crucible, Pbn, Pyrolytic Boron Nitride

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