LED Substrates Sapphire Wafer for Mocvd Nitride Growth

MOCVD Vacuum Chamber Lid used in crystal growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex Silicon Carbide Coated MOCVD Vacuum Chamber Lid engineered specifically stand up to these challenging environments. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

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Semicorex Graphite components are high purity SiC coated graphite, using in the process to grow the single crystal and wafer process. The LED Substrates Sapphire Wafer for Mocvd Nitride Growth Compound growth has high heat and corrosion resistance, are durable to experience a combination of volatile precursor gases, plasma, and high temperature.

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Parameters of LED Substrates Sapphire Wafer for Mocvd Nitride Growth

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300