High Temperature Chamber Furnace

MOCVD Vacuum Chamber Lid used in crystal growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex Silicon Carbide Coated MOCVD Vacuum Chamber Lid engineered specifically stand up to these challenging environments. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

"Sincerity, Innovation, Rigorousness, and Efficiency" is the persistent conception of our company for the long-term to develop together with customers for mutual reciprocity and mutual benefit for High Temperature Chamber Furnace, In a word, when you choose us, you choose a ideal existence. Welcome to visit our factory and welcome your get! For even further inquiries, remember to usually do not hesitate to make contact with us. High Temperature Chamber Furnace Small Ceramic Kiln, Vacuum Box Furnace, Melting Induction Box Furnace, In order to make more people know our items and to enlarge our market, we've got devoted a lot of attention to technical innovations and improvement, as well as replacement of equipment. Last but not the least, we also pay more attention to training our managerial personnel, technicians and workers in planned way.

Semicorex Graphite components are high purity SiC coated graphite, using in the process to grow the single crystal and wafer process. The High Temperature Chamber Furnace Compound growth has high heat and corrosion resistance, are durable to experience a combination of volatile precursor gases, plasma, and high temperature.

At Semicorex, we are committed to providing high-quality products and services to our customers. We use only the best materials, and our products are designed to meet the highest standards of quality and performance. Our High Temperature Chamber Furnace is no exception. Contact us today to learn more about how we can help you with your semiconductor wafer processing needs.

Parameters of High Temperature Chamber Furnace

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300