Heat Resistance Silicon Carbide Ceramic Sagger Sic Crucible with Lid

MOCVD Vacuum Chamber Lid used in crystal growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex Silicon Carbide Coated MOCVD Vacuum Chamber Lid engineered specifically stand up to these challenging environments. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

Our primary intention should be to offer our clientele a serious and responsible enterprise relationship, delivering personalized attention to all of them for Heat Resistance Silicon Carbide Ceramic Sagger Sic Crucible with Lid, We warmly welcome all intrigued customers to speak to us for additional information and facts. Heat Resistance Silicon Carbide Ceramic Sagger Sic Crucible with Lid Silicon Carbide Ceramic Cup, Silicon Carbide Copple, Sic Cup, Our company warmly invites domestic and overseas customers to come and negotiate business with us. Allow us to join hands to create a brilliant tomorrow! We are looking forward to cooperating with you sincerely to achieve a win-win situation. We promise to try our best to deliver you with high quality and efficient services.

Semicorex Graphite components are high purity SiC coated graphite, using in the process to grow the single crystal and wafer process. The Heat Resistance Silicon Carbide Ceramic Sagger Sic Crucible with Lid Compound growth has high heat and corrosion resistance, are durable to experience a combination of volatile precursor gases, plasma, and high temperature.

At Semicorex, we are committed to providing high-quality products and services to our customers. We use only the best materials, and our products are designed to meet the highest standards of quality and performance. Our Heat Resistance Silicon Carbide Ceramic Sagger Sic Crucible with Lid is no exception. Contact us today to learn more about how we can help you with your semiconductor wafer processing needs.

Parameters of Heat Resistance Silicon Carbide Ceramic Sagger Sic Crucible with Lid

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300