GaN LED Epitaxial Wafer Susceptors Manufacturer Pss Sapphire Substrate

Semicorex PSS Etching Carrier Plate for Semiconductor is specially engineered for high-temperature and harsh chemical cleaning environments required for epitaxial growth and wafer handling processes. Our ultra-pure PSS Etching Carrier Plate for Semiconductor is designed to support wafers during thin-film deposition phases like MOCVD and epitaxy susceptors, pancake or satellite platforms. Our SiC coated carrier has high heat and corrosion resistance, excellent heat distribution properties, and a high thermal conductivity. We provide cost-effective solutions to our customers, and our products cover many European and American markets. Semicorex looks forward to being your long-term partner in China.

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Product Description

To be able to ideal meet up with client's needs, all of our operations are strictly performed in line with our motto ""High High-quality, Competitive Cost, Fast Service"" for GaN LED Epitaxial Wafer Susceptors Manufacturer Pss Sapphire Substrate, Our enterprise is dedicated to providing prospects with superior and stable top quality items at competitive selling price, producing each and every customer content with our services and products. GaN LED Epitaxial Wafer Susceptors Manufacturer Pss Sapphire Substrate GaN LED Wafer Manufacturer, Sapphire GaN LED Supplier, LED Epi Wafer Manufacturer, We care about every steps of our services, from factory selection, product development & design, price negotiation, inspection, shipping to aftermarket. We have implemented a strict and complete quality control system, which ensures that each product can meet quality requirements of customers. Besides, all of our products have been strictly inspected before shipment. Your Success, Our Glory: Our aim is to help customers realize their goals. We are making great efforts to achieve this win-win situation and sincerely welcome you to join us.

The GaN LED Epitaxial Wafer Susceptors Manufacturer Pss Sapphire Substrate from Semicorex is the ideal solution for thin-film deposition phases like MOCVD, epitaxy susceptors, pancake or satellite platforms, and wafer handling processing such as etching. Our ultra-pure graphite carrier is designed to support wafers and withstand harsh chemical cleaning and high-temperature environments. The SiC coated carrier has high heat and corrosion resistance, excellent heat distribution properties, and a high thermal conductivity. Our products are cost-effective and have a good price advantage.

Parameters of GaN LED Epitaxial Wafer Susceptors Manufacturer Pss Sapphire Substrate

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of GaN LED Epitaxial Wafer Susceptors Manufacturer Pss Sapphire Substrate

- Avoid peeling off and ensure coating on all surface

High temperature oxidation resistance: Stable at high temperatures up to 1600°C

High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.

Corrosion resistance: high hardness, dense surface and fine particles.

Corrosion resistance: acid, alkali, salt and organic reagents.

- Achieve the best laminar gas flow pattern

- Guarantee evenness of thermal profile

- Prevent any contamination or impurities diffusion

Hot Tags: GaN LED Wafer Manufacturer, Sapphire GaN LED Supplier, LED Epi Wafer Manufacturer

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