GaN LED Epitaxial Wafer Manufacturer Pss Sapphire Substrate

Wafer carriers used in epixial growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex SiC Coated PSS Etching Carrier engineered specifically for these demanding epitaxy equipment applications. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

Dependable high-quality and good credit rating standing are our principles, which will help us at a top-ranking position. Adhering into the tenet of "quality first, consumer supreme" for GaN LED Epitaxial Wafer Manufacturer Pss Sapphire Substrate, We sincerely welcome domestic and foreign retailers who phone calls, letters asking, or to plants to barter, we'll supply you excellent products and solutions plus the most enthusiastic provider,We look ahead on your check out as well as your cooperation. GaN LED Epitaxial Wafer Manufacturer Pss Sapphire Substrate GaN LED Wafer Manufacturer, Sapphire GaN LED Supplier, LED Epi Wafer Manufacturer, We care about every steps of our services, from factory selection, product development & design, price negotiation, inspection, shipping to aftermarket. We have implemented a strict and complete quality control system, which ensures that each product can meet quality requirements of customers. Besides, all of our products have been strictly inspected before shipment. Your Success, Our Glory: Our aim is to help customers realize their goals. We are making great efforts to achieve this win-win situation and sincerely welcome you to join us.

Not only for thin film deposition phases such as epitaxy or MOCVD, or wafer handling processing such as etching, Semicorex supplies ultra-pure GaN LED Epitaxial Wafer Manufacturer Pss Sapphire Substrate used to support wafers. In plasma etch or dry etch, this equipment, epitaxy susceptors, pancake or satellite platforms for the MOCVD, are first subjected to the deposition environment, so it has high heat and corrosion resistance. The GaN LED Epitaxial Wafer Manufacturer Pss Sapphire Substrate also has a high thermal conductivity, and excellent heat distribution properties.

SiC coated PSS (Patterned Sapphire Substrate) etching carriers are used in the fabrication of LED (Light Emitting Diode) devices. The PSS etch carrier serves as a substrate for the growth of a thin film of gallium nitride (GaN) that forms the LED structure. The PSS etch carrier is then removed from the LED structure using a wet etching process, leaving behind a patterned surface that enhances the light extraction efficiency of the LED.

Parameters of GaN LED Epitaxial Wafer Manufacturer Pss Sapphire Substrate

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of high purity GaN LED Epitaxial Wafer Manufacturer Pss Sapphire Substrate

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.

Hot Tags: GaN LED Wafer Manufacturer, Sapphire GaN LED Supplier, LED Epi Wafer Manufacturer

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