GaN Epitaxial Wafer Supplier Provide GaN on Silicon Wafer

Perfect for graphite epitaxy and wafer handling process, Semicorex ultra-pure Monocrystalline Silicon Epitaxial Susceptor ensure minimal contamination and provide exceptionally long life performance. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.

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Semicorex GaN Epitaxial Wafer Supplier Provide GaN on Silicon Wafer is a graphite product coated with high purified SiC, which has high heat and corrosion resistance. The CVD silicon carbide coated carrier used in processes that form the epitaxial layer on semiconductor wafers, which has a high thermal conductivity, and excellent heat distribution properties.
Our GaN Epitaxial Wafer Supplier Provide GaN on Silicon Wafer is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.
Contact us today to learn more about our GaN Epitaxial Wafer Supplier Provide GaN on Silicon Wafer.

Parameters of GaN Epitaxial Wafer Supplier Provide GaN on Silicon Wafer

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of GaN Epitaxial Wafer Supplier Provide GaN on Silicon Wafer

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.
- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.
- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.
- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.
- High melting point, high temperature oxidation resistance, corrosion resistance.

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