Epitaxy Single Crystal Siliocn Substrate at Western Minmetals (SC) Corporation

If you need a graphite susceptor that can perform reliably and consistently in even the most demanding high-temperature and corrosive environments, the Semicorex Barrel Susceptor for Liquid Phase Epitaxy is the perfect choice. Its silicon carbide coating provides excellent thermal conductivity and heat distribution, ensuring exceptional performance in semiconductor manufacturing applications.

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Product Description

We follow our enterprise spirit of "Quality, Efficiency, Innovation and Integrity". We aim to create much more worth for our buyers with our abundant resources, highly developed machinery, experienced workers and great providers for Epitaxy Single Crystal Siliocn Substrate at Western Minmetals (SC) Corporation, Our enterprise warmly welcome close friends from everywhere in the environment to go to, examine and negotiate organization. Epitaxy Single Crystal Siliocn Substrate at Western Minmetals (SC) Corporation Epitaxy Silicon Substrate, Epi Substrate Silicon Wafer, Single Crystal Silicon Wafer, We are proud to supply our items to every costumer all around the world with our flexible, fast efficient services and strictest quality control standard which has always approved and praised by customers.

The Semicorex Epitaxy Single Crystal Siliocn Substrate at Western Minmetals (SC) Corporation is the go-to choice for semiconductor manufacturing applications that require high heat and corrosion resistance. Its high-purity SiC coating and exceptional thermal conductivity provide superior protection and heat distribution properties, ensuring reliable and consistent performance in even the most challenging environments.

Our Epitaxy Single Crystal Siliocn Substrate at Western Minmetals (SC) Corporation is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.

Parameters of Epitaxy Single Crystal Siliocn Substrate at Western Minmetals (SC) Corporation

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of Epitaxy Single Crystal Siliocn Substrate at Western Minmetals (SC) Corporation

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.

Hot Tags: Epitaxy Silicon Substrate, Epi Substrate Silicon Wafer, Single Crystal Silicon Wafer

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