Epi Substrate Single Crystal Silicon Wafer at Western Minmetals

Semicorex Monocrystalline Silicon Wafer Susceptor is the ideal solution for graphite epitaxy and wafer handling processes. Our ultra-pure product ensures minimal contamination and exceptional long-life performance, making it a popular choice in many European and American markets. As a leading provider of semiconductor wafer carriers in China, we look forward to becoming your long-term partner.

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Product Description

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Our Monocrystalline Silicon epitaxial Susceptor is a graphite product coated with high-purity SiC, which has high heat and corrosion resistance. The CVD silicon carbide coated carrier is used in processes that form the epitaxial layer on semiconductor wafers. It has a high thermal conductivity and excellent heat distribution properties, which are essential for efficient and precise semiconductor manufacturing processes.
One of the key features of our Epi Substrate Single Crystal Silicon Wafer at Western Minmetals is its excellent density. Both the graphite substrate and the silicon carbide layer have good density and can play a good protective role in high-temperature and corrosive working environments. The silicon carbide coated susceptor used for single crystal growth has a very high surface flatness, which is essential for maintaining high-quality wafer production.
Another important feature of our product is its ability to reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer. This effectively improves the bonding strength, preventing cracking and delamination. Additionally, both the graphite substrate and silicon carbide layer have high thermal conductivity and excellent heat distribution properties, ensuring that heat is distributed evenly during the manufacturing process.
Our Epi Substrate Single Crystal Silicon Wafer at Western Minmetals is also resistant to high-temperature oxidation and corrosion, making it a reliable and durable product. Its high melting point ensures that it can withstand the high-temperature environment required for efficient semiconductor manufacturing.
In conclusion, Semicorex Epi Substrate Single Crystal Silicon Wafer at Western Minmetals is an ultra-pure, durable, and reliable solution for graphite epitaxy and wafer handling processes. Its excellent density, surface flatness, and thermal conductivity make it ideal for use in high-temperature and corrosive environments. We take pride in providing high-quality products at competitive prices and look forward to partnering with you for all your semiconductor wafer carrier needs.

Parameters of Epi Substrate Single Crystal Silicon Wafer at Western Minmetals

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of Epi Substrate Single Crystal Silicon Wafer at Western Minmetals

- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion

Hot Tags: Epi Substrate Silicon Wafer, Monocrystal Silicon Wafer, Single Crystal Silicon Wafer

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