Double Spiral Sic Heating Elements with Round Ceramic Holder

Semicorex's Wafer Holder for ICP Etching Process is the perfect choice for demanding wafer handling and thin film deposition processes. Our product boasts superior heat and corrosion resistance, even thermal uniformity, and optimal laminar gas flow patterns for consistent and reliable results.

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Product Description

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Choose Semicorex's Double Spiral Sic Heating Elements with Round Ceramic Holder for reliable and consistent performance in wafer handling and thin film deposition processes. Our product offers high-temperature oxidation resistance, high purity, and corrosion resistance to acid, alkali, salt, and organic reagents.
Our Double Spiral Sic Heating Elements with Round Ceramic Holder is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.
Contact us today to learn more about our Double Spiral Sic Heating Elements with Round Ceramic Holder.

Parameters of Double Spiral Sic Heating Elements with Round Ceramic Holder

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300