Customizable SiC Crucible for Molecular Beam Epitaxy

Semicorex is a leading independently owned manufacturer of Silicon Carbide Coated Graphite, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our GaN-on-SiC Epitaxial Wafers Carrier has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

"Sincerity, Innovation, Rigorousness, and Efficiency" is the persistent conception of our company for the long-term to develop together with customers for mutual reciprocity and mutual benefit for Customizable SiC Crucible for Molecular Beam Epitaxy, Adhering into the business enterprise philosophy of 'customer initial, forge ahead', we sincerely welcome purchasers from at your home and abroad to cooperate with us. Customizable SiC Crucible for Molecular Beam Epitaxy, Mbe Crucible, SiC, Wafer Epitaxy, Our company's main merchandise are widely used all over the world; 80% of our products exported to the United States, Japan, Europe and other markets. All stuff sincerely welcome guests come to visit our factory.

Semicorex SiC Coating of Customizable SiC Crucible for Molecular Beam Epitaxy is a dense, wear-resistant silicon carbide (SiC) coating. It has high corrosion and heat resistance properties as well as excellent thermal conductivity. We apply SiC in thin layers onto the graphite using the chemical vapor deposition (CVD) process.
Our Customizable SiC Crucible for Molecular Beam Epitaxy is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.
Contact us today to learn more about our Customizable SiC Crucible for Molecular Beam Epitaxy.

Parameters of Customizable SiC Crucible for Molecular Beam Epitaxy

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of Customizable SiC Crucible for Molecular Beam Epitaxy

- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion

Hot Tags: Mbe Crucible, SiC, Wafer Epitaxy

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