Ceramic Silicon Carbide Graphite Crucible SiC coated graphite susceptor for wafer epitaxy

Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Epitaxy Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.

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Product Description

Just about every member from our large efficiency income crew values customers' wants and enterprise communication for Ceramic Silicon Carbide Graphite Crucible SiC coated graphite susceptor for wafer epitaxy, The concept of our organization is "Sincerity, Speed, Provider, and Satisfaction". We are going to follow this concept and earn more and more customers' satisfaction. Ceramic Silicon Carbide Graphite Crucible SiC coated graphite susceptor for wafer epitaxy, Refractory Pot, Graphite Crucible, Our company mission is that providing high quality and beautiful solutions with reasonable price and strive to gain 100% good reputation from our clients. We believe Profession achieves excellence! We welcome you to cooperate with us and grow up together.

Semicorex provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, such as Ceramic Silicon Carbide Graphite Crucible SiC coated graphite susceptor for wafer epitaxy, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming SIC protective layer. The SIC formed is firmly bonded to the graphite base, giving the graphite base special properties, thus making the surface of the graphite compact, Porosity-free, high temperature resistance, corrosion resistance and oxidation resistance.
Our Ceramic Silicon Carbide Graphite Crucible SiC coated graphite susceptor for wafer epitaxy is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.
Contact us today to learn more about our Ceramic Silicon Carbide Graphite Crucible SiC coated graphite susceptor for wafer epitaxy.

Parameters of Ceramic Silicon Carbide Graphite Crucible SiC coated graphite susceptor for wafer epitaxy

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of Ceramic Silicon Carbide Graphite Crucible SiC coated graphite susceptor for wafer epitaxy

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.
- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.
- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.
- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.
- High melting point, high temperature oxidation resistance, corrosion resistance.

Hot Tags: SiC coated graphite susceptor for wafer epitaxy, Refractory Pot, Graphite Crucible

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