CVD Silicon Carbide Sic Graphite Crucible

Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC Coated Graphite Susceptor for MOCVD has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.

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Product Description

Using a complete scientific high quality management program, superior high quality and superior faith, we acquire great reputation and occupied this industry for CVD Silicon Carbide Sic Graphite Crucible, 1st business enterprise, we find out each other. Even further business enterprise, the trust is getting there. Our enterprise always at your services at any time. CVD Silicon Carbide Sic Graphite Crucible Silicon Carbide Crucible, Crucible, Graphite Crucible, Since the establishment of our company, we have realized the importance of providing good quality products and the best before-sales and after-sales services. Most problems between global suppliers and clients are due to poor communication. Culturally, suppliers can be reluctant to question things they do not understand. We break down those barriers to ensure you get what you want to the level you expect, when you want it.

Semicorex CVD Silicon Carbide Sic Graphite Crucible is a high purity Silicon Carbide coated graphite carrier, using in the process to grow the epixial layer on the wafer chip. It is the center plate in MOCVD, the shape of gear or ring. CVD Silicon Carbide Sic Graphite Crucible has high heat and corrosion resistance, which has great stability in extreme environment.
At Semicorex, we are committed to providing high-quality products and services to our customers. We use only the best materials, and our products are designed to meet the highest standards of quality and performance. Our CVD Silicon Carbide Sic Graphite Crucible is no exception. Contact us today to learn more about how we can help you with your semiconductor wafer processing needs.

Parameters of CVD Silicon Carbide Sic Graphite Crucible

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of CVD Silicon Carbide Sic Graphite Crucible

- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion

Hot Tags: CVD Silicon Carbide Crucible, Crucible, Graphite Crucible

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