CVD Graphene Furnace / Sliding Rtp Tube Furnace for CVD Graphene, Fast Annealing

Semicorex CVD Chemical Vapor Deposition furnaces make the manufacture of high-quality epitaxy more efficient. We provide custom furnace solutions. Our CVD Chemical Vapor Deposition furnaces have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

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Semicorex CVD Graphene Furnace / Sliding Rtp Tube Furnace for CVD Graphene, Fast Annealing designed for CVD and CVI, are used to deposit materials onto a substrate. The reaction temperatures up to 2200°C. Mass flow controls and modulating valves coordinate reactant and carrier gases like N, H, Ar, CO2, methane, silicon tetrachloride, methyl trichlorosilane, and ammonia. Materials deposited include silicon carbide, pyrolytic carbon, boron nitride, zinc selenide, and zinc sulfide. CVD Graphene Furnace / Sliding Rtp Tube Furnace for CVD Graphene, Fast Annealing have both horizontal and vertical structures.

Application: SiC coating for C/C composite material, SiC coating for graphite, SiC, BN and ZrC coating for fiber and etc.

Features of Semicorex CVD Graphene Furnace / Sliding Rtp Tube Furnace for CVD Graphene, Fast Annealing

1.Robust design made of high-quality materials for long-term use;

2.Precisely controlled gas delivery through the use of mass flow controllers and high-quality valves;

3.Equipped with safety features such as over-temperature protection and gas leak detection for safe and reliable operation;

4.Using multiple temperature control zones, great temperature uniformity;

5.Specially designed deposition chamber with good sealing effect and great anti-contamination performance;

6.Using multiple deposition channels with uniform gas flow, without deposition dead corners and perfect deposition surface;

7.It has treatment for the tar, solid dust, and organic gases during the deposition process

Specifications of CVD Furnace
Model	Working Zone Size (W × H × L) mm	Max. Temperature (°C)	Temperature Uniformity (°C)	Ultimate Vacuum (Pa)	Pressure Increase Rate (Pa/h)
LFH-6900-SiC	600×600×900	1500	±7.5	1-100	0.67
LFH-10015-SiC	1000×1000×1500	1500	±7.5	1-100	0.67
LFH-1220-SiC	1200×1200×2000	1500	±10	1-100	0.67
LFH-1530-SiC	1500×1500×3000	1500	±10	1-100	0.67
LFH-2535-SiC	2500×2000×3500	1500	±10	1-100	0.67
LFV-D3050-SiC	φ300×500	1500	±5	1-100	0.67
LFV-D6080-SiC	φ600×800	1500	±7.5	1-100	0.67
LFV-D8120-SiC	φ800×1200	1500	±7.5	1-100	0.67
LFV-D11-SiC	φ1100×2000	1500	±10	1-100	0.67
LFV-D26-SiC	φ2600×3200	1500	±10	1-100	0.67

*The above parameters can be adjusted to the process requirements, they are not as acceptance standard, the detail spec. will be stated in the technical proposal and agreements.

Hot Tags: CVD Graphenen Furnace, Graphenen Furnace, Rtp Tube Furnace

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