6 Inch Free-Standing Semi-Insulating Sic Substrates/ Sic Epitaxial Wafer/ Wide Band Gap Materials/High Power Semiconductor

Semicorex provides high purity semi-insulating SiC ingot with 4 inches and 6 inches. We have been manufacturer and supplier of wafers for many years. Our 4" 6" High Purity Semi-Insulating SiC Ingot has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

Our products are broadly regarded and reliable by end users and can meet up with constantly transforming financial and social requires of 6 Inch Free-Standing Semi-Insulating Sic Substrates/ Sic Epitaxial Wafer/ Wide Band Gap Materials/High Power Semiconductor, For further info, you should usually do not hesitate to call us. All inquiries from you might be extremely appreciated. 6 Inch Free-Standing Semi-Insulating Sic, Silicon Carbide, III-V Materials, We have been sincerely looking forward to cooperate with customers all over the world. We believe we can satisfy you with our high-quality products and solutions and perfect service . We also warmly welcome customers to visit our company and purchase our products.

Our 6 Inch Free-Standing Semi-Insulating Sic Substrates/ Sic Epitaxial Wafer/ Wide Band Gap Materials/High Power Semiconductor has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.

4 Inch Semi-insulating SiC Ingot Specification
Items	Production Grade	Dummy Grade
Polytype	4H
Resistivity/ohm ·cm	NA
Diameter	100.25±0.25 mm
Thickness	≥15 mm
Surface orientation error	0±0.2°
Primary flat orientation	[1- 100]±5.0°
Primary flat length	32.5±1.5 mm
Secondary flat	90.0°CW from Primary ±5.0°, silicon face up
Secondary flat length	17±1.5 mm
Micropipe density	≤1 ea/cm2	≤10 ea/cm2
Edge Cracks	≤3 ea，≤1mm/ea	≤5 ea，≤3mm/ea
Polytype areas	None	≤5% area
Edge indents	≤3 ea，≤1mm width and depth	≤5 ea，≤2mm width and depth
Label	C-face
Packaging	unit-ingot cassette, vacuum packaging

6 Inch Semi-insulating SiC Ingot Specification
Items	Production Grade	Dummy Grade
Polytype	4H
Resistivity/ohm ·cm	NA
Diameter	150.25±0.25 mm
Thickness	≥10 mm
Surface orientation error	0±0.25°
Notch orientation	[1- 100]±5.0°
Notch depth	1~1.25 mm
Micropipe density	≤1 ea/cm2	≤10 ea/cm2
Edge Cracks	≤3 ea，≤1mm/ea	≤5 ea，≤3mm/ea
Polytype areas	None	≤5% area
Edge indents	≤3 ea，≤1mm width and depth	≤5 ea，≤2mm width and depth
Label	C-face
Packaging	unit-ingot cassette, vacuum packaging

Hot Tags: Sic, Silicon Carbide, III-V Materials

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